TM HiPerFAST IGBT with Diode V I V CES C25 CE(sat) IXSH 24N60U1 600 V 48 A 2.2 V Short Circuit SOA Capability IXSH 24N60AU1 600 V 48 A 2.7 V Symbol Test Conditions Maximum Ratings TO-247 AD V T = 25 C to 150 C600 V CES J V T = 25 C to 150 C R = 1 M 600 V CGR J GE C (TAB) V Continuous 20 V GES G C V Transient 30 V GEM E I T = 25 C48A G = Gate, C = Collector, C25 C E = Emitter, TAB = Collector I T = 90 C24A C90 C I T = 25 C, 1 ms 96 A CM C SSOA V = 15 V, T = 125 C, R = 10 I = 48 A GE VJ G CM (RBSOA) Clamped inductive load, L = 100 H 0.8 V Features CES t V = 15 V, V = 360 V, T = 125 C, 10 s SC GE CE J International standard package (SCSOA) R = 82 , non-repetitive G JEDEC TO-247 AD High frequency IGBT and anti-parallel P T = 25 C 150 W C C FRED in one package T -55 ... +150 C TM J 2nd generation HDMOS process T 150 C JM Low V CE(sat) T -55 ... +150 C stg - for minimum on-state conduction losses Maximum Lead temperature for soldering 300 C MOS Gate turn-on 1.6 mm (0.062 in.) from case for 10 s - drive simplicity Maximum Tab temperature for soldering SMD devices for 10 s 260 C Fast Recovery Epitaxial Diode (FRED) M Mounting torque, TO-247 1.13/10 Nm/lb.in. d - soft recovery with low I RM Weight TO-247 AD 6 g Applications AC motor speed control DC servo and robot drives Symbol Test Conditions Characteristic Values DC choppers (T = 25 C, unless otherwise specified) Uninterruptible power supplies (UPS) J min. typ. max. Switch-mode and resonant-mode power supplies BV I = 750 A, V = 0 V 600 V CES C GE V I = 1.5 mA, V = V 3.5 6.5 V GE(th) C CE GE Advantages I V = 0.8 V T = 25 C 500 A CES CE CES J V = 0 V T = 125 C8mA GE J Space savings (two devices in one package) I V = 0 V, V = 20 V 100 nA GES CE GE Suitable for surface mounting Easy to mount with 1 screw, TO-247 V I = I , V = 15 V IXSH 24N60U1 2.2 V CE(sat) C C90 GE (isolated mounting screw hole) IXSH 24N60AU1 2.7 V Reduces assembly time and cost IXYS reserves the right to change limits, test conditions, and dimensions. 92820I (7/00) 2000 IXYS All rights reserved 1 - 2IXSH 24N60U1 IXSH 24N60AU1 Symbol Test Conditions Characteristic Values TO-247 AD (IXSH) Outline (T = 25 C, unless otherwise specified) J min. typ. max. g I = I V = 10 V, 9 13 S fs C C90 CE Pulse test, t 300 s, duty cycle 2 % I V = 15 V, V = 10 V 65 A C(on) GE CE C 1800 pF ies C V = 25 V, V = 0 V, f = 1 MHz 200 pF oes CE GE C 45 pF res Q 75 90 nC g Q I = I , V = 15 V, V = 0.5 V 20 30 nC ge C C90 GE CE CES Q 35 50 nC gc t 100 ns d(on) Inductive load, T = 25 C J t 200 ns ri I = I , V = 15 V, L = 100 H, C C90 GE Dim. Millimeter Inches t 450 ns V = 0.8 V , R = R = 10 d(off) CE CES G off Min. Max. Min. Max. t Remarks: Switching times may 24N60U1 500 ns fi A 19.81 20.32 0.780 0.800 increase for V (Clamp) > 0.8 V , B 20.80 21.46 0.819 0.845 24N60AU1 275 ns CE CES higher T or increased R E 24N60AU1 2 mJ J G C 15.75 16.26 0.610 0.640 off D 3.55 3.65 0.140 0.144 t 100 ns E 4.32 5.49 0.170 0.216 d(on) F 5.4 6.2 0.212 0.244 t 200 ns Inductive load, T = 125 C ri J G 1.65 2.13 0.065 0.084 I = I , V = 15 V, L = 100 H E 1.8 mJ C C90 GE on H - 4.5 - 0.177 V = 0.8 V , R = R = 10 t 475 ns CE CES G off d(off) J 1.0 1.4 0.040 0.055 t 24N60U1 600 ns fi Remarks: Switching times may K 10.8 11.0 0.426 0.433 24N60AU1 450 ns increase for V (Clamp) > 0.8 V , CE CES L 4.7 5.3 0.185 0.209 E 24N60U1 4 mJ higher T or increased R M 0.4 0.8 0.016 0.031 off J G 24N60AU1 3 mJ N 1.5 2.49 0.087 0.102 R 0.83 K/W thJC R 0.25 K/W thCK Reverse Diode (FRED) Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions min. typ. max. V I = I , V = 0 V, 1.6 V F F C90 GE Pulse test, t 300 s, duty cycle d 2 % I I = I , V = 0 V, -di /dt = 240 A/ s1015A RM F C90 GE F t V = 360 V T = 125 C 150 ns rr R J I = 1 A -di/dt = 100 A/ s V = 30 V T = 25 C35 50 ns F R J R 1 K/W thJC IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 2000 IXYS All rights reserved 2 - 2 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025