TM IXTA130N10T V = 100V TrenchMV DSS IXTP130N10T I = 130A Power MOSFET D25 R 9.1m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings S (TAB) V T = 25C to 175C 100 V DSS J V T = 25C to 175C, R = 1M 100 V DGR J GS TO-220 (IXTP) V Transient 30 V GSM I T = 25C 130 A D25 C I Lead Current Limit, RMS 75 A LRMS I T = 25C, pulse width limited by T 350 A DM C JM G (TAB) D S I T = 25C65A A C E T = 25C 500 mJ AS C G = Gate D = Drain P T = 25C 360 W S = Source TAB = Drain D C T -55 ... +175 C J Features T 175 C JM T -55 ... +175 C stg z Ultra-low On Resistance z T 1.6mm (0.062 in.) from case for 10s 300 C Unclamped Inductive Switching (UIS) L T Plastic body for 10 seconds 260 C SOLD rated z Low package inductance M Mounting torque (TO-220) 1.13 / 10 Nm/lb.in. d - easy to drive and to protect z Weight TO-220 3.0 g 175 C Operating Temperature TO-263 2.5 g Advantages z Easy to mount z Space savings z High power density Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) Min. Typ. Max. J Applications BV V = 0V, I = 250A 100 V DSS GS D z Automotive - Motor Drives V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D - 42V Power Bus I V = 20V, V = 0V 200 nA GSS GS DS - ABS Systems z DC/DC Converters and Off-line UPS I V = V 5 A DSS DS DSS z Primary Switch for 24V and 48V V = 0V T = 150C 250 A GS J Systems z R V = 10V, I = 25A, Notes 1, 2 9.1 m Distributed Power Architechtures DS(on) GS D and VRMs z Electronic Valve Train Systems z High Current Switching Applications z High Voltage Synchronous Recifier 2008 IXYS CORPORATION, All rights reserved DS99649B(07/08) IXTA130N10T IXTP130N10T Symbol Test Conditions Characteristic Values TO-263 (IXTA) Outline (T = 25C unless otherwise specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 55 93 S fs DS D C 5080 pF iss C V = 0V, V = 25V, f = 1MHz 635 pF oss GS DS C 95 pF rss t Resistive Switching Times 30 ns d(on) t V = 10V, V = 0.5 V , I = 25A 47 ns r GS DS DSS D t R = 5 (External) 44 ns d(off) G t 28 ns f Pins: 1 - Gate 2 - Drain Q 104 nC 3 - Source 4, TAB - Drain g(on) Q V = 10V, V = 0.5 V , I = 25A 30 nC gs GS DS DSS D Dim. Millimeter Inches Min. Max. Min. Max. Q 29 nC gd A 4.06 4.83 .160 .190 A1 2.03 2.79 .080 .110 R 0.42 C/W b 0.51 0.99 .020 .039 thJC b2 1.14 1.40 .045 .055 R TO-220 0.50 C/W thCH c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 7.11 8.13 .280 .320 Source-Drain Diode E 9.65 10.29 .380 .405 E1 6.86 8.13 .270 .320 Symbol Test Conditions Characteristic Values e 2.54 BSC .100 BSC T = 25C unless otherwise specified) Min. Typ. Max. L 14.61 15.88 .575 .625 J L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 I V = 0V 130 A L3 1.27 1.78 .050 .070 S GS L4 0 0.38 0 .015 R 0.46 0.74 .018 .029 I Pulse width limited by T 350 A SM JM V I = 25A, V = 0V, Note 1 1.0 V TO-220 (IXTP) Outline SD F GS t 67 ns rr I = 0.5 I , -di/dt = 100A/s F S I 4.7 A RM V = 0.5 V , V = 0V R DSS GS Q 160 nC rr Notes: 1. Pulse test, t 300 s duty cycle, d 2%. 2. On through-hole packages, R Kelvin test contact DS(on) location must be 5 mm or less from the package body. Pins: 1 - Gate 2 - Drain 3 - Source 4, TAB - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537