TM Linear L2 V = 500V IXTA15N50L2 DSS Power MOSFETs I = 15A IXTP15N50L2 D25 R 480m w/ Extended FBSOA DS(on) IXTH15N50L2 N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) V T = 25C to 150C 500 V DSS J V T = 25C to 150C, R = 1M 500 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM G I T = 25C15A D D (Tab) D25 C S I T = 25C, Pulse Width Limited by T 35 A DM C JM TO-247 (IXTH) I T = 25C 15 A A C E T = 25C 750 mJ AS C P T = 25C 300 W D C T -55 ... +150 C G J D T 150 C D (Tab) JM S T -55 ... +150 C stg T 1.6mm (0.062 in.) from Case for 10s 300 C L G = Gate D = Drain T Plastic Body for 10s 260 C SOLD S = Source Tab = Drain M Mounting Torque (TO-220 & TO-247) 1.13/10 Nm/lb.in. d Features Weight TO-263 2.5 g TO-220 3.0 g z TO-247 6.0 g Designed for Linear Operation z International Standard Packages z Avalanche Rated z Molding Epoxies Meet UL 94 V-0 Flammability Classification z Guaranteed FBSOA at 75C Advantages Symbol Test Conditions Characteristic Values z Easy to Mount (T = 25C, Unless Otherwise Specified) Min. Typ. Max. z J Space Savings z High Power Density BV V = 0V, I = 250A 500 V DSS GS D V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D Applications I V = 20V, V = 0V 100 nA GSS GS DS z I V = V , V = 0V 25 A Solid State Circuit Breakers DSS DS DSS GS z T = 125C 200 A Soft Start Controls J z Linear Amplifiers R V = 10V, I = 0.5 I , Note 1 480 m DS(on) GS D D25 z Programmable Loads z Current Regulators 2011 IXYS CORPORATION, All Rights Reserved DS100054B(12/11) IXTA15N50L2 IXTP15N50L2 IXTH15N50L2 Symbol Test Conditions Characteristic Values TO-247 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 4.5 6.3 8.0 S fs DS D D25 C 4080 pF iss C V = 0V, V = 25V, f = 1MHz 265 pF oss GS DS C 68 pF rss t 38 ns d(on) Resistive Switching Times t 73 ns r V = 10V, 0.5 V , I = 0.5 I GS DSS D D25 t 110 ns d(off) R = 10 (External) G t 65 ns f Q 123 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 20 nC gs GS DS DSS D D25 1 = Gate 2 = Drain Q 72 nC gd 3 = Source R 0.42 C/W thJC R (TO-220) 0.50 C/W thCS (TO-247) 0.25 C/W Safe Operating Area Specification Characteristic Values Symbol Test Conditions Min. Typ. Max. SOA V = 400V, I = 375mA, T = 75C, tp = 2s 150 W DS D C Source-Drain Diode Symbol Test Conditions Characteristic Values TO-220 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 15 A S GS I Repetitive, pulse width limited by T 60 A SM JM V I = 15A, V = 0V, Note 1 1.5 V SD F GS I = 15A, -di/dt = 100A/s, V = 100V, V = 0V t 570 ns F R GS rr Note 1: Pulse test, t 300s, duty cycle, d 2%. TO-263 Outline Pins: 1 - Gate 2 - Drain 3 - Source 1 = Gate 2 = Drain 3 = Source 4 = Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537