TM IXTA 36N30P V = 300 V PolarHT DSS IXTP 36N30P I = 36 A D25 Power MOSFET IXTQ 36N30P R 110 m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 300 V DSS J G V T = 25 C to 150 C R = 1 M 300 V S DGR J GS D(TAB) V Continuous 30 V GS V Transient 40 V GSM TO-220 (IXTP) I T = 25C36A D25 C I T = 25 C, pulse width limited by T 90 A DM C JM I T = 25C36A AR C E T = 25C30mJ AR C D(TAB) G D S E T = 25 C 1.0 J AS C TO-3P (IXTQ) dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS T 150C, R = 10 J G P T = 25 C 300 W D C T -55 ... +150 C J G T 150 C JM D D(TAB) T -55 ... +150 C stg S T 1.6 mm (0.062 in.) from case for 10 s 300 C L G = Gate D = Drain T Plastic body for 10 s 260 C SOLD S = Source TAB = Drain M Mounting torque (TO-3P / TO-220) 1.13/10 Nm/lb.in. d Features Weight TO-3P 5.5 g TO-220 4 g l TO-263 3 g International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance Symbol Test Conditions Characteristic Values - easy to drive and to protect (T = 25 C, unless otherwise specified) Min. Typ. Max. J BV V = 0 V, I = 250 A 300 V DSS GS D Advantages V V = V , I = 250A 3.0 5.5 V GS(th) DS GS D l Easy to mount I V = 20 V , V = 0 100 nA l GSS GS DC DS Space savings l High power density I V = V 1 A DSS DS DSS V = 0 V T = 125 C 200 A GS J R V = 10 V, I = 0.5 I 92 110 m DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % DS99155E(10/05) 2005 IXYS All rights reserved IXTA 36N30P IXTP 36N30P IXTQ 36N30P Symbol Test Conditions Characteristic Values TO-3P (IXTQ) Outline (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 10 V I = 0.5 I , pulse test 12 22 S fs DS D D25 C 2250 pF iss C V = 0 V, V = 25 V, f = 1 MHz 370 pF oss GS DS C 90 pF rss t 24 ns d(on) t V = 10 V, V = 0.5 V , I = I 30 ns r GS DS DSS D D25 t R = 10 (External) 97 ns d(off) G t 28 ns f Q 70 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 17 nC gs GS DS DSS D D25 Q 35 nC gd R 0.42C/W thJC R (TO-3P) 0.21 C/W thCS (TO-220) 0.25 C/W Source-Drain Diode Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 36 A S GS I Repetitive 90 A SM TO-220 (IXTP) Outline V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25 A, -di/dt = 100 A/s 250 ns rr F Q V = 100 V, V = 0 V 2.0 C RM R GS TO-263 (IXTA) Outline Pins: 1 - Gate 2 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2