TM
PolarP IXTA36P15P V = - 150V
DSS
IXTP36P15P I = - 36A
Power MOSFETs
D25
IXTQ36P15P
R 110m
DS(on)
P-Channel Enhancement Mode
IXTH36P15P
Avalanche Rated
TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ)
G
G
D
S
G
S
D
D (Tab)
S
D (Tab)
D (Tab)
TO-247 (IXTH)
Symbol Test Conditions Maximum Ratings
V T = 25C to 150C - 150 V
DSS J
V T = 25C to 150C, R = 1M - 150 V
DGR J GS
V Continuous 20 V
GSS
G
V Transient 30 V D
GSM
S
D (Tab)
I T = 25C - 36 A
D25 C
I T = 25C, Pulse Width Limited by T - 90 A
G = Gate D = Drain
DM C JM
S = Source Tab = Drain
I T = 25C - 36 A
A C
E T = 25C 1.5 J
AS C
dv/dt I I , V V , T 150C 10 V/ns
S DM DD DSS J
Features
P T = 25C 300 W
D C
z
T -55 ... +150 C
International Standard Packages
J
T 150 C z TM
JM Rugged PolarP Process
T -55 ... +150 C
z
stg
Avalanche Rated
z
Low Package Inductance
T 1.6mm (0.062 in.) from Case for 10s 300 C
L
z
T Plastic Body for 10s 260 C Fast Intrinsic Diode
SOLD
z
Dynamic dv/dt Rated
M Mounting Torque (TO-3P,TO-220 & TO-247) 1.13/10 Nm/lb.in.
d
z
Low R and Q
DS(ON) G
F Mounting Force (TO-263) 10..65/2.2..14.6 N/lb.
C
z
Low Drain-to-Tab Capacitance
Weight TO-263 2.5 g
TO-220 3.0 g
Advantages
TO-3P 5.5 g
TO-247 6.0 g
z
Easy to Mount
z
Space Savings
z
Symbol Test Conditions Characteristic Values
High Power Density
(T = 25C, Unless Otherwise Specified) Min. Typ. Max.
J
Applications
BV V = 0V, I = - 250 A - 150 V
DSS GS D
z
V V = V , I = - 250A - 2.5 - 4.5 V High-Side Switching
GS(th) DS GS D
z
Push Pull Amplifiers
I V = 20V, V = 0V 100 nA
GSS GS DS z
DC Choppers
z
I V = V , V = 0V -10 A Automatic Test Equipment
DSS DS DSS GS
z
T = 125C - 250 A Current Regulators
J
R V = -10V, I = 0.5 I , Note 1 110 m
DS(on) GS D D25
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DS99791D(01/13)IXTA36P15P IXTP36P15P
IXTQ36P15P IXTH36P15P
Symbol Test Conditions Characteristic Values
(T = 25C, Unless Otherwise Specified) Min. Typ. Max.
J
g V = -10V, I = 0.5 I , Note 1 11 19 S
fs DS D D25
C 3100 pF
iss
C V = 0V, V = - 25V, f = 1MHz 610 pF
oss GS DS
C 100 pF
rss
t 21 ns
d(on)
Resistive Switching Times
t 31 ns
r
V = -10V, V = 0.5 V , I = 0.5 I
GS DS DSS D D25
t 36 ns
d(off)
R = 3.3 (External)
G
t 15 ns
f
Q 55 nC
g(on)
Q V = -10V, V = 0.5 V , I = 0.5 I 20 nC
gs GS DS DSS D D25
Q 18 nC
gd
R 0.42 C/W
thJC
R (TO-3P, TO-247) 0.21 C/W
thCS
(TO-220) 0.50 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T = 25C, Unless Otherwise Specified) Min. Typ. Max.
J
I V = 0V - 36 A
S GS
I Repetitive, Pulse Width Limited by T -140 A
SM JM
V I = -18A, V = 0V, Note 1 - 3.3 V
SD F GS
t 228 ns
rr
I = -18A, -di/dt = -100A/s
F
Q 2.0 C
RM
V = - 75V, V = 0V
I R GS -17.6 A
RM
Note 1: Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
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