High Voltage V = 1200V IXTA3N120 DSS Power MOSFET I = 3A IXTP3N120 D25 R 4.5 DS(on) IXTH3N120 N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) V T = 25 C to 150 C 1200 V DSS J V T = 25 C to 150 C, R = 1M 1200 V DGR J GS V Continuous 20 V GSS V Transient 30 V G GSM D D (Tab) S I T = 25 C3A D25 C TO-247 (IXTH) I T = 25 C, Pulse Width Limited by T 12 A DM C JM I T = 25 C3A A C E T = 25 C 700 mJ AS C dv/dt I I , V V , T 150 C 5 V/ns S DM DD DSS J G D P T = 25 C 200 W D C S D (Tab) T -55 ... +150 C J G = Gate D = Drain T 150 C JM S = Source Tab = Drain T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L Features T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C International Standard Packages M Mounting Torque (TO-247 & TO-220) 1.13 / 10 Nm/lb.in d High Voltage Package Fast Intrinsic Diode Weight TO-263 2.5 g Avalanche Rated TO-220 3.0 g Molding Epoxies meet UL 94 V-0 TO-247 6.0 g Flammability Classification High Blocking Voltage Symbol Test Conditions Characteristic Values Advantages (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Easy to Mount BV V = 0V, I = 1mA 1200 V DSS GS D Space Savings High Power Density V V = V , I = 250A 2.5 5.0 V GS(th) DS GS D I V = 20V, V = 0V 100 nA GSS GS DS Applications I V = V , V = 0V 25 A DSS DS DSS GS T = 125C 1 mA J High Voltage Power Supplies Capacitor Discharge Applications R V = 10V, I = 0.5 I , Note 1 4.5 DS(on) GS D D25 Pulse Circuits 2015 IXYS CORPORATION, All Rights Reserved DS98844F(0515)IXTA3N120 IXTP3N120 IXTH3N120 Symbol Test Conditions Characteristic Values TO-220 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 20V, I = 0.5 I , Note 1 1.5 2.6 S fs DS D D25 C 1100 1350 pF iss C V = 0V, V = 25V, f = 1MHz 110 135 pF oss GS DS C 40 60 pF rss t 17 ns d(on) Resistive Switching Times t 15 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 32 ns d(off) R = 4.7 (External) G t 18 ns f Q 42 nC g(on) Pins: 1 - Gate 2 - Drain Q V = 10V, V = 0.5 V , I = 0.5 I 8 nC gs GS DS DSS D D25 3 - Source Q 21 nC gd R 0.62 C/W thJC R TO-220 0.50 C/W thCS R TO-247 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J TO-247 Outline I V = 0V 3 A S GS I Repetitive, Pulse Width Limited by T 12 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t I = 3A, V 700 ns = 0V,-di/dt = 100A/s rr F GS V = 100V R Note 1: Pulse test, t 300s, duty cycle, d 2%. 1 - Gate 2,4 - Drain 3 - Source TO-263 Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.06 4.83 .160 .190 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 8.00 8.89 .280 .320 E 9.65 10.41 .380 .405 E1 6.22 8.13 .270 .320 e 2.54 BSC .100 BSC L 14.61 15.88 .575 .625 L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 1. Gate L3 1.27 1.78 .050 .070 2,4. Drain L4 0 0.13 0 .005 3. Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537