TM V = 500V Polar IXTY3N50P DSS I = 3A Power MOSFET IXTA3N50P D25 R 2 DS(on) IXTP3N50P N-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S D (Tab) TO-263 (IXTA) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 500 V DSS J G V T = 25 C to 150 C, R = 1M 500 V DGR J GS S V Continuous 30 V GSS D (Tab) V Transient 40 V GSM TO-220 (IXTP) I T = 25 C3A D25 C I T = 25 C, Pulse Width Limited by T 8A DM C JM I T = 25 C3A A C G D D (Tab) E T = 25 C 180 mJ S AS C dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J G = Gate D = Drain P T = 25 C70W D C S = Source Tab = Drain T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD International Standard Packages Low Q F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb G C Avalanche Rated M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d Low Package Inductance Weight TO-252 0.35 g Fast Intrinsic Rectifier TO-263 2.50 g TO-220 3.00 g Advantages High Power Density Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 250A 500 V DSS GS D V V = V , I = 50A 3.0 5.5 V DC-DC Converters GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 30V, V = 0V 100 nA Power Supplies GSS GS DS AC and DC Motor Drives I V = V , V = 0V 5 A DSS DS DSS GS Discharge Circiuts in Lasers, Spark T = 125C 50 A J Igniters, RF Generators High Voltage Pulse Power R V = 10V, I = 0.5 I , Note 1 2 DS(on) GS D D25 Applications 2017 IXYS CORPORATION, All Rights Reserved DS99200F(6/17)IXTY3N50P IXTA3N50P IXTP3N50P Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 2.5 3.5 S fs DS D D25 C 409 pF iss C V = 0V, V = 25V, f = 1MHz 48 pF oss GS DS C 6.1 pF rss Q 9.3 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 3.3 nC gs GS DS DSS D D25 Q 3.4 nC gd t 15 ns d(on) Resistive Switching Times t 15 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 38 ns d(off) R = 20 (External) G t 12 ns f R 1.8 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 3 A S GS I Repetitive, Pulse Width Limited by T 9 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS I = 3A, -di/dt = 100A/ s, V = 100V t 400 ns F R rr Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537