TM IXTA 3N60P V = 600 V PolarHV DSS IXTP 3N60P I = 3.0 A Power MOSFET D25 IXTY 3N60P R 2.9 DS(on) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) V T = 25 C to 150 C 600 V DSS J V T = 25 C to 150 C R = 1 M 600 V DGR J GS V Continuous 30 V G GS S V Transient 40 V GSM (TAB) I T = 25 C 3.0 A D25 C TO-220 (IXTP) I T = 25 C, pulse width limited by T 6A DM C JM I T = 25C3A AR C E T = 25C10mJ AR C E T = 25 C 100 mJ AS C G dv/dt I I , di/dt 100 A/s, V V 5 V/ns S DM DD DSS D (TAB) S T 150 C, R = 30 J G TO-252 (IXTY) P T = 25C70W D C T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg G T 1.6 mm (0.062 in.) from case for 10 s 300 C L S (TAB) T Plastic body for 10 s 260 C SOLD Weight TO-220 4 g G = Gate D = Drain S = Source TAB = Drain TO-263 3 g TO-252 0.35 g Features l International standard packages Symbol Test Conditions Characteristic Values l Unclamped Inductive Switching (UIS) (T = 25 C unless otherwise specified) Min. Typ. Max. J rated BV V = 0 V, I = 250 A 600 V l DSS GS D Low package inductance V V = V , I = 50 A 3.0 5.5 V - easy to drive and to protect GS(th) DS GS D I V = 30 V , V = 0 100 nA GSS GS DC DS Advantages l Easy to mount I V = V 5 A DSS DS DSS l V = 0 V T = 125C50 A Space savings GS J l High power density R V = 10 V, I = 0.5 I , Note 1 2.9 DS(on) GS D D25 2006 IXYS All rights reserved DS99449E(04/06) IXTA 3N60P IXTP 3N60P IXTY 3N60P Symbol Test Conditions Characteristic Values (T = 25 C unless otherwise specified) J TO-220 (IXTP) Outline Min. Typ. Max. g V = 20 V I = 0.5 I , Note 1 2.2 3.4 S fs DS D D25 C 411 pF iss C V = 0 V, V = 25 V, f = 1 MHz 44 pF oss GS DS C 6.4 pF rss t 25 ns d(on) t V = 10 V, V = 0.5 V , I = I 25 ns r GS DS DSS D D25 t R = 30 (External) 58 ns d(off) G t 22 ns f Q 9.8 nC Pins: 1 - Gate 2 - Drain g(on) 3 - Source 4 - Drain Q V = 10 V, V = 0.5 V , I = 0.5 I 3.4 nC gs GS DS DSS D D25 Q 3.5 nC gd R 1.80 C/W thJC R (TO-220) 0.25 CW thCS Source-Drain Diode Characteristic Values T = 25 C unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 3 A S GS I Repetitive 9 A SM V I = I , V = 0 V, Note 1 1.5 V SD F S GS TO-252 (IXTY) Outline t I = 3 A, -di/dt = 100 A/s 500 ns rr F V = 100 V, V = 0 V R GS Note 1: Pulse test, t 300 s, duty cycle d 2 % Pins: 1 - Gate 3 - Source TO-263 (IXTA) Outline 4 - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 2.19 2.38 0.086 0.094 A1 0.89 1.14 0.035 0.045 A2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.32 5.21 0.170 0.205 E 6.35 6.73 0.250 0.265 E1 4.32 5.21 0.170 0.205 e 2.28 BSC 0.090 BSC e1 4.57 BSC 0.180 BSC H 9.40 10.42 0.370 0.410 L 0.51 1.02 0.020 0.040 L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 L3 2.54 2.92 0.100 0.115 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2