TM TrenchP V = - 150V IXTA44P15T DSS I = - 44A Power MOSFETs IXTP44P15T D25 R 65m DS(on) IXTQ44P15T P-Channel Enhancement Mode IXTH44P15T Avalanche Rated TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G G S D G D (Tab) S D D (Tab) S Tab Symbol Test Conditions Maximum Ratings TO-247 (IXTH) V T = 25C to 150C - 150 V DSS J V T = 25C to 150C, R = 1M - 150 V DGR J GS V Continuous 15 V GSS G V Transient 25 V GSM D D (Tab) S I T = 25C - 44 A D25 C I T = 25C, Pulse Width Limited by T -130 A DM C JM G = Gate D = Drain S = Source Tab = Drain I T = 25C - 22 A A C E T = 25C1J AS C P T = 25C 298 W D C Features T -55 ... +150 C J T 150 C JM z International Standard Packages T -55 ... +150 C stg z Avalanche Rated T 1.6mm (0.062 in.) from Case for 10s 300 C z L Extended FBSOA T Plastic Body for 10s 260 C SOLD z Fast Intrinsic Diode z M Mounting Torque (TO-220, TO-247 & TO-3P) 1.13/10 Nm/lb.in. Low R and Q d DS(ON) G Weight TO-263 2.5 g TO-220 3.0 g Advantages TO-3P 5.5 g TO-247 6.0 g z Easy to Mount z Space Savings z High Power Density Symbol Test Conditions Characteristic Values Applications (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z BV V = 0V, I = - 250A -150 V High-Side Switching DSS GS D z Push Pull Amplifiers V V = V , I = - 250A - 2.0 - 4.0 V GS(th) DS GS D z DC Choppers I V = 15V, V = 0V 100 nA z GSS GS DS Automatic Test Equipment z Current Regulators I V = V , V = 0V - 15 A DSS DS DSS GS z Battery Charger Applications T = 125C - 750 A J R V = -10V, I = 0.5 I , Note 1 65 m DS(on) GS D D25 2013 IXYS CORPORATION, All Rights Reserved DS100023B(01/13) IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 27 45 S fs DS D D25 C 13.4 nF iss C V = 0V, V = - 25V, f = 1MHz 675 pF oss GS DS C 183 pF rss t 25 ns d(on) Resistive Switching Times t 42 ns r = -10V, V = 0.5 V , I = 0.5 I V GS DS DSS D D25 t 50 ns d(off) R = 1 (External) G t 17 ns f Q 175 nC g(on) Q V = -10V, V = 0.5 V , I = 0.5 I 65 nC gs GS DS DSS D D25 Q 58 nC gd R 0.42 C/W thJC R TO-220 0.50 C/W thCS TO-247 & TO-3P 0.21 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 44 A S GS I Repetitive, Pulse Width Limited by T -176 A SM JM V I = I , V = 0V, Note 1 -1.3 V SD F S GS t 140 ns rr I = - 22A, -di/dt = -100A/s F Q 0.87 C RM V = - 75V, V = 0V R GS I -12.4 A RM Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537