X-On Electronics has gained recognition as a prominent supplier of IXTA4N150HV MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTA4N150HV MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXTA4N150HV IXYS

Name: IXTA4N150HV
Brand: IXYS
SKU: IXTA4N150HV_IXYS
Availability: OutOfStock
Rating: 5 (11 reviews)

IXTA4N150HV electronic component of IXYS

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Part No.	IXTA4N150HV
Manufacturer:	IXYS
Category:	MOSFETs
Description:	MOSFET DiscMosfet N-CH Std-HiVoltage TO-263D2
Datasheet:	IXTA4N150HV Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 28.4004 ea
Line Total: USD 28.4

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

IXTA4N150HV More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Wed. 04 Dec to Fri. 06 Dec MOQ : 1 Multiples : 1	1 : USD 27.7131 10 : USD 25.559 50 : USD 24.3991

0 Ship by Wed. 04 Dec to Fri. 06 Dec MOQ : 1 Multiples : 1	1 : USD 28.4004 2 : USD 26.8535

We are delighted to provide the IXTA4N150HV from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTA4N150HV and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

IXTA4N150HV is a DiscMosfet N-Channel Standard High Voltage power MOSFET produced by IXYS. It is produced in a TO-263D2 package, making it a compact source of efficient DC power switching. This component has an on-resistance of 150mO and an off-state voltage rating of 600V, enabling it to handle large power loads efficiently. The high voltage rating also makes IXTA4N150HV suitable for AC applications, allowing it to support up to 400 volts.The IXTA4N150HV has a number of features and benefits which make it ideal for use in any application where efficient DC power switching or high voltage AC power switching is needed. Its low on-resistance means that it doesn’t waste a lot of power and retains most of the energy sent to it, making it an efficient choice. The standard high voltage rating also means that the IXTA4N150HV can be used in a variety of applications where high voltage power sources are needed. Furthermore, due to its compact TO-263D2 package, it can easily be integrated into any design.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CLR may also be referenced as

IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS

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Manufacturer IXYS IXYS
Product Category MOSFETs MOSFETs
RoHS - XON Y Y
Id - Continuous Drain Current 4 A 4 A
Vds - Drain-Source Breakdown Voltage 1.5 kV 1.5 kV
Rds On - Drain-Source Resistance 4 mOhms 4 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 2.5 V 2.5 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 280 W 280 W
Mounting Style Smd/Smt Smd/Smt
Package / Case TO - 263HV - 2 TO - 263HV - 2
Packaging Tube Tube
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 30 V 30 V
Qg - Gate Charge 375 nC 375 nC
Channel Mode Enhancement Enhancement
Configuration Single Single
Transistor Type 1 N - Channel 1 N - Channel
Brand Ixys Ixys
Fall Time 13 ns 13 ns
Product Type Mosfet Mosfet
Rise Time 43 ns 43 ns
Factory Pack Quantity : 50 50
Subcategory Mosfets Mosfets
Typical Turn-Off Delay Time 184 ns 184 ns
Typical Turn-On Delay Time 44 ns 44 ns