Advance Technical Information TM V = 800 V IXTA4N80P PolarHV DSS I = 3.6 A IXTP4N80P D25 Power MOSFET R 3.4 DS(on) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) V T = 25C to 150C 800 V DSS J V T = 25C to 150C R = 1 M 800 V DGR J GS V Continuous 30 V GSS G V Transient 40 V S GSM (TAB) I T = 25C 3.6 A D25 C TO-220 (IXTP) I T = 25C, pulse width limited by T 8A DM C JM I T = 25C2A AR C E T = 25C20mJ AR C E T = 25C 250 mJ AS C (TAB) G dv/dt I I , di/dt 100 A/s, V V , 10 V/ns D S DM DD DSS S T 150C, R = 18 J G G = Gate D = Drain P T = 25C 100 W D C S = Source TAB = Drain T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg T 1.6 mm (0.062 in.) from case for 10 s 300 C L T Plastic body for 10 s 260 C SOLD M Mounting torque (TO-220) 1.13/10 Nm/lb.in. d Weight TO-220 4 g Features TO-263 3 g z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance Symbol Test Conditions Characteristic Values - easy to drive and to protect (T = 25C, unless otherwise specified) Min. Typ. Max. J BV V = 0 V, I = 250 A 800 V DSS GS D Advantages V V = V , I = 100A 3.0 5.5 V GS(th) DS GS D z Easy to mount I V = 30 V, V = 0 V 100 nA GSS GS DS z Space savings z I V = V 5 A High power density DSS DS DSS V = 0 V T = 125C 150 A GS J R V = 10 V, I = 0.5 I 3.4 DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % DS99596E(08/06) 2006 IXYS CORPORATION All rights reservedIXTA4N80P IXTP4N80P TO-263 (IXTA) Outline Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) J Min. Typ. Max. g V = 10 V I = 0.5 I , pulse test 2.5 4.0 S fs DS D D25 C 750 pF iss C V = 0 V, V = 25 V, f = 1 MHz 70 pF oss GS DS C 6.3 pF rss t 22 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 24 ns r GS DS DSS D D25 t R = 18 (External) 60 ns d(off) G t 29 ns f Q 14.2 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 4.8 nC gs GS DS DSS D D25 Q 4.8 nC gd R 1.25 C/W thJC R (TO-220) 0.25 C/W thCS Source-Drain Diode Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. TO-220 (IXTP) Outline I V = 0 V 3.5 A S GS I Repetitive 8 A SM V I = I , V = 0 V 1.5 V SD F S GS t I = 3.5 A, -di/dt = 100 A/s, 560 ns rr F Pulse test, t 300 s, duty cycle d 2 % Pins: 1 - Gate 2 - Drain 3 - Source 4 - Drain ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537