IXTA50N25T IXTQ50N25T Trench Gate V = 250V DSS IXTP50N25T IXTH50N25T I = 50A Power MOSFET D25 R 60m DS(on) N-Channel Enhancement Mode TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G G D S S G D (Tab) D D (Tab) D (Tab) S TO-247 (IXTH) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 250 V DSS J V T = 25C to 150C, R = 1M 250 V DGR J GS V Transient 30 V G GSM D D (Tab) S I T = 25C50A D25 C I T = 25C, Pulse Width Limited by T 130 A DM C JM G = Gate D = Drain I T = 25C 5 A A C S = Source Tab = Drain E T = 25C 1.5 J AS C P T = 25C 400 W D C T -55 ... +150 C J Features T 150 C JM T -55 ... +150 C stg z Avalanche Rated z T 1.6mm (0.062in.) from Case for 10s 300 C High Current Handling Capability L z Plastic Body for 10 s 260 C Fast Intrinsic Rectifier z Low R M Mounting Torque (TO-220, TO-3P &TO-247) 1.13 / 10 Nmlb.in. DS(on) d F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb. C Weight TO-263 2.5 g Advantages TO-220 3.0 g TO-3P 5.5 g z High Power Density TO-247 6.0 g z Easy to Mount z Space Savings Symbol Test Conditions Characteristic Values Applications (T = 25C Unless Otherwise Specified) Min. Typ . Max. J z DC-DC Coverters BV V = 0V, I = 1mA 250 V DSS GS D z Battery Chargers z V V = V , I = 1mA 3.0 5.0 V Switch-Mode and Resonant-Mode GS(th) DS GS D Power Supplies I V = 20V, V = 0V 100 nA z GSS GS DS DC Choppers z AC and DC Motor Drives I V = V , V = 0V 1 A DSS DS DSS GS z Uninterrupted Power Supplies T = 125C 150 A z J High Speed Power Switching Applications R V = 10V, I = 0.5 I , Note 1 60 m DS(on) GS D D25 2010 IXYS CORPORATION, All Rights Reserved DS99346B(01/10) IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ . Max. J g V = 10V, I = 0.5 I , Note 1 35 58 S fs DS D D25 C 4000 pF iss C V = 0V, V = 25V, f = 1MHz 410 pF oss GS DS C 60 pF rss t 14 ns d(on) Resistive Switching Times t 25 ns r V = 15V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 47 ns d(off) R = 3.3 (External) G t 25 ns f Q 78 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 19 nC gs GS DS DSS D D25 Q 22 nC gd R 0.31 C/W thJC R (TO-220) 0.50 C/W thCH (TO-3P & TO-247) 0.25 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ . Max. J I V = 0V 50 A S GS I Repetitive, Pulse Width Limited by T 200 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS 166 ns t rr I = 25A, -di/dt = 250A/s F I 23 A RM V = 100V, V = 0V R GS Q 1.9 C RM Note: 1. Pulse test, t 300s duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537