TM Trench V = 100V IXTA60N10T DSS I = 60A Power MOSFET IXTP60N10T D25 R 18m DS(on) N-Channel Enhancement Mode TO-263 Avalanche Rated (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 V T = 25 C to 175 C 100 V DSS J (IXTP) V T = 25 C to 175 C, R = 1M 100 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM G D S I T = 25 C 60 A D25 C D (Tab) I T = 25 C, Pulse Width Limited by T 180 A DM C JM G = Gate D = Drain I T = 25 C10 A A C S = Source Tab = Drain E T = 25 C 500 mJ AS C P T = 25 C 176 W D C T -55 ... +175 C Features J T 175 C JM Ultra-Low On Resistance T -55 ... +175 C stg Avalanche Rated T Maximum Lead Temperature for Soldering 300 C Low Package Inductance L - Easy to Drive and to Protect T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD 175 C Operating Temperature F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C Fast Intrinsic Diode M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d Weight TO-263 2.5 g Advantages TO-220 3.0 g Easy to Mount Space Savings High Power Density Applications Symbol Test Conditions Characteristic Values Automotive (T = 25 C Unless Otherwise Specified) Min. Typ. Max. - Motor Drives J - 42V Power Bus BV V = 0V, I = 250 A 100 V DSS GS D - ABS Systems V V = V , I = 50A 2.5 4.5 V DC/DC Converters and Off-line UPS GS(th) DS GS D Primary Switch for 24V and 48V I V = 20V, V = 0V 100 nA GSS GS DS Systems I V = V , V = 0V 1 A Distributed Power Architechtures DSS DS DSS GS and VRMs T = 150C 100A J Electronic Valve Train Systems R V = 10V, I = 25A, Notes 1& 2 14.8 18.0 m DS(on) GS D High Current Switching Applications High Voltage Synchronous Recifier 2018 IXYS CORPORATION, All rights reserved DS99647C(11/18) IXTA60N10T IXTP60N10T Symbol Test Conditions Characteristic Values TO-263 Outline A (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. E E1 J C2 L1 g V = 10V, I = 30A, Note 1 25 42 S D1 fs DS D D 4 L2 H A1 1 2 3 C 2650 pF iss b b2 C V = 0V, V = 25V, f = 1MHz 335 pF L3 oss GS DS e e c 0.43 11.0 0 C 60 pF rss 0.34 8.7 t 27 ns 0.66 16.6 d(on) A2 Resistive Switching Times t 40 ns 1 - Gate 0.20 5.0 0.12 3.0 r V = 10V, V = 0.5 V , I = 10A 2,4 - Drain GS DS DSS D t 43 ns 3 - Source 0.10 2.5 0.06 1.6 d(off) R = 15 (External) G t 37 ns f Q 49 nC g(on) Q V = 10V, V = 0.5 V , I = 10A 15 nC gs GS DS DSS D Q 11 nC gd R 0.85C/W thJC R TO-220 0.50 C/W thCH Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 60 A S GS I Repetitive, Pulse Width Limited by T 240 A TO-220 Outline SM JM E A oP A1 V I = 25A, V = 0V, Note 1 1.2 V F GS SD H1 Q t 59 ns rr I = 30A, V = 0V D2 F GS D I 5.1 A RM -di/dt = 100A/s, V = 50V D1 R Q 180 nC RM E1 A2 EJECTOR PIN L1 L ee c 3X b Notes: 1. Pulse test, t 300 s duty cycle, d 2%. e1e1 3X b2 2. On through-hole packages, R Kelvin test contact 1 - Gate DS(on) 2,4 - Drain location must be 5mm or less from the package body. 3 - Source IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537