Preliminary Technical Information TM LinearL2 V = 100V IXTA64N10L2 DSS Power MOSFET I = 64A IXTP64N10L2 D25 R 32m w/Extended FBSOA DS(on) IXTH64N10L2 N-Channel Enhancement Mode TO-263 (IXTA) Guaranteed FBSOA Avalanche Rated G S D (Tab) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 100 V DSS J G V T = 25 C to 150 C, R = 1M 100 V DGR J GS D S V Continuous 20 V D (Tab) GSS V Transient 30 V GSM TO-247 (IXTH) I T = 25C 64 A D25 C I T = 25 C, Pulse Width Limited by T 140 A DM C JM I T = 25C 32 A A C E T = 25C 2 J G AS C D D (Tab) S P T = 25 C 357 W D C T -55 to +150 C J G = Gate D = Drain T +150 C JM S = Source Tab = Drain T -55 to +150 C stg T Maximum Lead Temperature for Soldering 300 C L Features T Plastic Body for 10s 260 C SOLD F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb Designed for Linear Operation C M Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in International Standard Packages d Avalanche Rated Weight TO-263 2.5 g TO-220 3.0 g Guaranteed FBSOA at 75 C TO-247 6.0 g Advantages Easy to Mount Space Savings High Power Density Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. Applications J BV V = 0V, I = 250 A 100 V DSS GS D Solid State Circuit Breakers V V = V , I = 250 A 2.5 4.5 V GS(th) DS GS D Soft Start Controls I V = 20V, V = 0V 100 nA Linear Amplifiers GSS GS DS Programmable Loads I V = V , V = 0V 5 A DSS DS DSS GS Current Regulators T = 125C 25 A J R V = 10V, I = 0.5 I , Note 1 32 m DS(on) GS D D25 2018 IXYS CORPORATION, All Rights Reserved DS100557A(11/18) IXTA64N10L2 IXTP64N10L2 IXTH64N10L2 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 21 27 33 S fs DS D D25 C 3620 pF iss C V = 0V, V = 25V, f = 1MHz 720 pF oss GS DS C 235 pF rss R Integrated Gate Input Resistor 1.2 Gi t 14 ns d(on) Resistive Switching Times t 27 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 38 ns d(off) R = 0 (External) G t 11 ns f Q 100 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 16 nC gs GS DS DSS D D25 Q 45 nC gd R 0.35 C/W thJC R TO-220 0.50 C/W thCS TO-247 0.21 C/W Safe Operating Area Specification Characteristic Values Symbol Test Conditions Min. Typ. Max. SOA V = 100V, I = 2.15A, T = 75C, Tp = 5s 215 W DS D C Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 64 A S GS I Repetitive, Pulse Width Limited by T 256 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 180 ns rr I = 32A, -di/dt = 100A/ s, F I 16.2 A RM V = 50V, V = 0V R GS Q 1.46 C RM Note 1. Pulse test, t 300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537