Preliminary Technical Information High Voltage MOSFET V = 1000V IXTA6N100D2HV DSX Depletion Mode I > 6A D(on) R 2.2 DS(on) D N-Channel G TO-263HV S G S D (Tab) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 1000 V DSX J G = Gate D = Drain V Continuous 20 V GSX S = Source Tab = Drain V Transient 30 V GSM P T = 25 C 300 W D C T - 55 ... +150 C J T 150 C JM T - 55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD High Voltage package High Blocking Voltage M Mounting Force 10..65 / 2.2..14.6 N/lb. d Normally ON Mode Weight 2.5 g High Voltage package Advantages Easy to Mount Space Savings High Power Density Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. Applications J BV V = - 5V, I = 250A 1000 V DSX GS D Audio Amplifiers Start-Up Circuits V V = 25V, I = 250 A - 2.5 - 4.5 V GS(off) DS D Protection Circuits I V = 20V, V = 0V 100 nA Ramp Generators GSX GS DS Current Regulators I V = V , V = - 5V 5 A DSX(off) DS DSX GS Active Loads T = 125C 50A J R V = 0V, I = 3A, Note 1 2.2 DS(on) GS D I V = 0V, V = 50V, Note 1 6 A D(on) GS DS 2017 IXYS CORPORATION, All Rights Reserved DS100805A(4/17)IXTA6N100D2HV Symbol Test Conditions Characteristic Values TO-263HV Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 30V, I = 3A, Note 1 2.6 4.2 S fs DS D C 2650 pF iss C V = -10V, V = 25V, f = 1MHz 167 pF oss GS DS C 41 pF rss t 25 ns d(on) Resistive Switching Times t 80 ns r V = 5V, V = 500V, I = 3A GS DS D t 34 ns d(off) PIN: 1 - Gate R = 2.4 (External) G 2 - Source t 47 ns f 3 - Drain Q 95 nC g(on) Q V = 5V, V = 500V, I = 3A 11 nC gs GS DS D Q 51 nC gd R 0.41 C/W thJC Safe-Operating-Area Specification Characteristic Values Symbol Test Conditions Min. Typ. Max. SOA V = 800V, I = 225mA, T = 75 C, Tp = 5s 180 W DS D C Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J V I = 6A, V = -10V, Note 1 0.8 1.3 V SD F GS t 952 ns rr I = 3A, -di/dt = 100A/ s F I 16 A RM V = 100V, V = -10V R GS Q 7.6 C RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537