Depletion Mode V = 500V IXTA6N50D2 DSX MOSFET I > 6A IXTP6N50D2 D(on) R 550m IXTH6N50D2 DS(on) N-Channel D TO-263 AA (IXTA) G G S D (Tab) S TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 500 V DSX J V Continuous 20 V GSX G D D (Tab) V Transient 30 V S GSM P T = 25 C 300 W D C TO-247 (IXTH) T - 55 ... +150 C J T 150 C JM T - 55 ... +150 C stg T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10s 260 C SOLD G D M Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in. S D (Tab) d Weight TO-263 2.5 g TO-220 3.0 g G = Gate D = Drain TO-247 6.0 g S = Source Tab = Drain Features Normally ON Mode International Standard Packages Molding Epoxies Meet UL 94 V-0 Symbol Test Conditions Characteristic Values Flammability Classification (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV V = - 5V, I = 250A 500 V Advantages DSX GS D V V = 25V, I = 250 A - 2.5 - 4.5 V GS(off) DS D Easy to Mount Space Savings I V = 20V, V = 0V 100 nA GSX GS DS High Power Density I V = V , V = - 5V 5 A DSX(off) DS DSX GS T = 125C 50A Applications J R V = 0V, I = 3A, Note 1 550 m DS(on) GS D Audio Amplifiers Start-up Circuits I V = 0V, V = 25V, Note 1 6 A D(on) GS DS Protection Circuits Ramp Generators Current Regulators Active Loads 2017 IXYS CORPORATION, All Rights Reserved DS100177D(4/17)IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 Symbol Test Conditions Characteristic Values TO-220 Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 30V, I = 3A, Note 1 2.8 4.5 S fs DS D C 2800 pF iss C V = -10V, V = 25V, f = 1MHz 255 pF oss GS DS C 64 pF rss t 28 ns d(on) Resistive Switching Times t 72 ns r V = 5V, V = 250V, I = 3A GS DS D t 82 ns d(off) R = 2.4 (External) G t 43 ns f Q 96 nC Pins: 1 - Gate 2 - Drain g(on) 3 - Source Q V = 5V, V = 250V, I = 3A 11 nC gs GS DS D Q 48 nC gd R 0.41 C/W thJC R TO-220 0.50 C/W thCS TO-247 0.21 C/W Safe-Operating-Area Specification Characteristic Values Symbol Test Conditions Min. Typ. Max. SOA V = 400V, I = 0.45A, T = 75 C, Tp = 5s 180 W DS D C TO-247 Outline Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J V I = 6A, V = -10V, Note 1 0.8 1.3 V SD F GS t 350 ns rr I = 3A, -di/dt = 100A/ s F I 16 A RM V = 100V, V = -10V R GS Q 2.8 C RM Note 1. Pulse test, t 300s, duty cycle, d 2%. TO-263 Outline Dim. Millimeter Inches 1 = Gate Min. Max. Min. Max. 2 = Drain A 4.06 4.83 .160 .190 3 = Source b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 8.00 8.89 .280 .320 E 9.65 10.41 .380 .405 E1 6.22 8.13 .270 .320 1. Gate e 2.54 BSC .100 BSC 2. Drain L 14.61 15.88 .575 .625 3. Source 4. Drain L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537