TM V = 500 V IXTA 6N50P PolarHV DSS I =6A IXTP 6N50P D25 Power MOSFET R 1.1 DS(on) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) V T = 25 C to 150 C 500 V DSS J V T = 25 C to 150 C R = 1 M 500 V DGR J GS V Continuous 30 V G GSS S V Transient 40 V GSM (TAB) I T = 25C6A D25 C I T = 25 C, pulse width limited by T 15 A DM C JM TO-220 (IXTP) I T = 25C6A AR C E T = 25C20mJ AR C E T = 25 C 250 mJ AS C dv/dt I I , di/dt 100 A/s, V V , 10 V/ns (TAB) G S DM DD DSS D S T 150 C, R = 18 J G P T = 25 C 100 W D C G = Gate D = Drain S = Source TAB = Drain T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg T 1.6 mm (0.062 in.) from case for 10 s 300 C L T Plastic body for 10 s 260 C SOLD M Mounting torque (TO-220) 1.13/10 Nm/lb.in. d Features Weight TO-220 4 g l International standard packages TO-263 3 g l Unclamped Inductive Switching (UIS) rated l Low package inductance Symbol Test Conditions Characteristic Values - easy to drive and to protect (T = 25 C, unless otherwise specified) Min. Typ. Max. J BV V = 0 V, I = 250 A 500 V DSS GS D Advantages V V = V , I = 50A 3.0 5.0 V GS(th) DS GS D l Easy to mount l I V = 30 V, V = 0V 100 nA Space savings GSS GS DS l High power density I V = V 5 A DSS DS DSS V = 0 V T = 125C50 A GS J R V = 10 V, I = 0.5 I 1.1 DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % DS99447E(04/06) 2006 IXYS All rights reserved OBSOLETEIXTA 6N50P IXTP 6N50P TO-263 (IXTA) Outline Symbol Test Conditions Characteristic Values (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 20 V I = 0.5 I , pulse test 3.5 5.5 S fs DS D D25 C 740 pF iss C V = 0 V, V = 25 V, f = 1 MHz 85 pF oss GS DS C 8pF rss t 26 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 28 ns r GS DS DSS D D25 t R = 18 (External) 65 ns d(off) G t 26 ns f Q 14.6 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 4.8 nC gs GS DS DSS D D25 Q 5.6 nC gd R 1.25 C/W thJC R (TO-220) 0.25 C/W thCS Source-Drain Diode Characteristic Values (T = 25 C unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. TO-220 (IXTP) Outline I V = 0 V 6 A S GS I Repetitive 18 A SM V I = I , V = 0 V, -di/dt = 100 A/s 1.5 V SD F S GS t Pulse test, t 300 s, duty cycle d 2 % 400 ns rr Pins: 1 - Gate 2 - Drain 3 - Source 4 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 OBSOLETE