TM TrenchP V = - 100V IXTA76P10T DSS I = - 76A Power MOSFETs IXTP76P10T D25 R 25m DS(on) IXTH76P10T P-Channel Enhancement Mode D TO-263 AA (IXTA) Avalanche Rated G G S S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings V T = 25C to 150C - 100 V DSS J V T = 25C to 150C, R = 1M - 100 V DGR J GS V Continuous 15 V G GSS D D (Tab) S V Transient 25 V GSM TO-247 (IXTH) I T = 25C - 76 A D25 C I T = 25C, Pulse Width Limited by T - 230 A DM C JM I T = 25C - 38 A A C E T = 25C1J AS C G P T = 25C 298 W D D C D (Tab) S T -55 ... +150 C J T 150 C JM G = Gate D = Drain T -55 ... +150 C S = Source Tab = Drain stg T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10s 260 C SOLD Features M Mounting Torque (TO-220 & TO-247) 1.13 /10 Nm/lb.in. d z Weight TO-263 2.5 g International Standard Packages z TO-220 3.0 g Avalanche Rated TO-247 6.0 g z Extended FBSOA z Fast Intrinsic Diode z Low R and Q DS(ON) G Advantages Symbol Test Conditions Characteristic Values z Easy to Mount (T = 25C, Unless Otherwise Specified) Min. Typ. Max. z J Space Savings z BV V = 0V, I = - 250A -100 V High Power Density DSS GS D V V = V , I = - 250A - 2.0 - 4.0 V GS(th) DS GS D Applications I V = 15V, V = 0V 100 nA GSS GS DS z High-Side Switching I V = V , V = 0V - 15 A z DSS DS DSS GS Push Pull Amplifiers T = 125C - 750 A z J DC Choppers z Automatic Test Equipment R V = -10V, I = 0.5 I , Note 1 25 m DS(on) GS D D25 z Current Regulators z Battery Charger Applications 2013 IXYS CORPORATION, All Rights Reserved DS100024B(01/13) IXTA76P10T IXTP76P10T IXTH76P10T Symbol Test Conditions Characteristic Values TO-247 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 35 58 S fs DS D D25 C 13.7 nF iss C V = 0V, V = - 25V, f = 1MHz 890 pF oss GS DS C 275 pF rss t 25 ns d(on) Resistive Switching Times t 40 ns r = -10V, V = 0.5 V , I = 0.5 I V GS DS DSS D D25 t 52 ns d(off) R = 1 (External) G t 20 ns f Q 197 nC g(on) Q V = -10V, V = 0.5 V , I = 0.5 I 65 nC gs GS DS DSS D D25 Pins: 1 - Gate 2 - Drain Q 65 nC gd 3 - Source R 0.42 C/W thJC R TO-220 0.50 C/W thCS TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 76 A S GS I Repetitive, Pulse Width Limited by T - 304 A SM JM V I = - 38A, V = 0V, Note 1 -1.3 V SD F GS TO-220 Outline t 70 ns rr I = - 38A, -di/dt = -100A/s F Q 215 nC RM V = - 50V, V = 0V R GS I - 6 A RM Note 1: Pulse test, t 300s, duty cycle, d 2%. TO-263 Outline Pins: 1 - Gate 2 - Drain 3 - Source Pins: 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537