X4-Class V = 200V IXTA94N20X4 DSS TM Power MOSFET I = 94A D25 R 10.6m DS(on) D N-Channel Enhancement Mode G Avalanche Rated S TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings D (Tab) V T = 25 C to 175 C 200 V DSS J V T = 25 C to 175 C, R = 1M 200 V G = Gate D = Drain DGR J GS S = Source Tab = Drain V Continuous 20 V GSS V Transient 30 V GSM I T = 25 C 94 A D25 C I T = 25 C, Pulse Width Limited by T 220 A DM C JM Features I T = 25 C 47 A A C E T = 25 C 1 J AS C International Standard Package dv/dt I I , V V , T 150C 20 V/ns Low R and Q S DM DD DSS J DS(ON) G Avalanche Rated P T = 25 C 360 W D C Low Package Inductance T -55 ... +175 C J T 175 C JM Advantages T -55 ... +15 C stg High Power Density T Plastic Body for 10s 260 C SOLD Easy to Mount F Mounting Force 10..65 / 2.2..14.6 N/lb Space Savings C Weight 2.5 g Applications Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. AC and DC Motor Drives J Robotics and Servo Controls BV V = 0V, I = 250A 200 V DSS GS D V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D I V = 20V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 20 A DSS DS DSS GS T = 150 C 500 A J R V = 10V, I = 0.5 I , Notes 1 & 2 10.6 m DS(on) GS D D25 DS101010B(12/20) 2020 Littelfuse, Inc. IXTA94N20X4 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 60 100 S fs DS D D25 R Gate Input Resistance 5.3 Gi C 5050 pF iss C V = 0V, V = 25V, f = 1MHz 750 pF oss GS DS C 4 pF rss Effective Output Capacitance C 390 pF o(er) Energy related V = 0V GS C 1670 pF V = 0.8 V o(tr) Time related DS DSS t 18 ns d(on) Resistive Switching Times t 9 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 97 ns d(off) R = 5 (External) G t 7 ns f Q 77 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 21 nC gs GS DS DSS D D25 Q 25 nC gd R 0.42 C/W thJC Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 94 A S GS I Repetitive, pulse Width Limited by T 376 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 130 ns rr I = 47A, -di/dt = 200A/s F Q 1.1 C RM V = 100V R I 17 A RM Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. On through-hole packages, R Kelvin test contact DS(on) location must be 5mm or less from the package body. Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537