TM TrenchP V = - 85V IXTA96P085T DSS Power MOSFETs I = - 96A IXTP96P085T D25 R 13m DS(on) IXTH96P085T P-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings V T = 25C to 150C - 85 V DSS J V T = 25C to 150C, R = 1M - 85 V DGR J GS G V Continuous 15 V D D (Tab) GSS S V Transient 25 V GSM TO-247 (IXTH) I T = 25C - 96 A D25 C I T = 25C, Pulse Width Limited by T - 300 A DM C JM I T = 25C - 48 A A C G E T = 25C1J AS C D S D (Tab) P T = 25C 298 W D C T -55 ... +150 C G = Gate D = Drain J T 150 C S = Source Tab = Drain JM T -55 ... +150 C stg T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10s 260 C Features SOLD M Mounting Torque (TO-220 & TO-247) 1.13/10 Nm/lb.in. d z International Standard Packages Weight TO-263 2.5 g z Avalanche Rated TO-220 3.0 g z Extended FBSOA TO-247 6.0 g z Fast Intrinsic Diode z Low R and Q DS(ON) G Advantages Symbol Test Conditions Characteristic Values z Easy to Mount (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z Space Savings z BV V = 0V, I = - 250A - 85 V High Power Density DSS GS D V V = V , I = - 250A - 2.0 - 4.0 V GS(th) DS GS D Applications I V = 15V, V = 0V 100 nA GSS GS DS z High-Side Switching I V = V , V = 0V - 10 A z DSS DS DSS GS Push Pull Amplifiers T = 125C - 750 A z J DC Choppers z R V = -10V, I = 0.5 I , Note 1 13 m Automatic Test Equipment DS(on) GS D D25 z Current Regulators z Battery Charger Applications DS100025B(01/13) 2013 IXYS CORPORATION, All Rights Reserved IXTA96P085T IXTP96P085T IXTH96P085T Symbol Test Conditions Characteristic Values TO-247 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 40 66 S fs DS D D25 C 13.1 nF iss C V = 0V, V = - 25V, f = 1MHz 1175 pF oss GS DS C 460 pF rss t 23 ns d(on) Resistive Switching Times t 34 ns r = -10V, V = 0.5 V , I = 0.5 I V GS DS DSS D D25 t 45 ns d(off) R = 1 (External) G t 22 ns f Q 180 nC g(on) Q V = -10V, V = 0.5 V , I = 0.5 I 52 nC gs GS DS DSS D D25 Pins: 1 - Gate 2 - Drain Q 62 nC gd 3 - Source R 0.42 C/W thJC R TO-220 0.50 C/W thCS TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 96 A S GS I Repetitive, Pulse Width Limited by T - 394 A SM JM V I = - 48A, V = 0V, Note 1 -1.3 V SD F GS TO-220 Outline t 55 ns rr I = - 48A, -di/dt = -100A/s F Q 100 nC RM V = - 43V, V = 0V R GS I - 3.6 A RM Note 1. Pulse test, t 300s, duty cycle, d 2%. TO-263 Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.06 4.83 .160 .190 b 0.51 0.99 .020 .039 Pins: 1 - Gate 2 - Drain b2 1.14 1.40 .045 .055 3 - Source c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 8.00 8.89 .280 .320 E 9.65 10.41 .380 .405 E1 6.22 8.13 .270 .320 1. Gate e 2.54 BSC .100 BSC 2. Drain L 14.61 15.88 .575 .625 3. Source L1 2.29 2.79 .090 .110 4. Drain L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.13 0 .005 IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537