Preliminary Technical Information High Voltage V = 4500V IXTF02N450 DSS Power MOSFET I = 200mA D25 R 625 DS(on) (Electrically Isolated Tab) TM ISOPLUS i4-Pak N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings 1 2 Isolated Tab V T = 25 C to 150 C 4500 V DSS J 5 V T = 25 C to 150 C, R = 1M 4500 V DGR J GS V Continuous 20 V GSS 1 = Gate 5 = Drain V Transient 30 V GSM 2 = Source I T = 25 C 200 mA D25 C I T = 25 C, Pulse Width Limited by T 600 mA DM C JM P T = 25 C78W D C Features T - 55 ... +150 C J T 150 C JM Silicon Chip on Direct-Copper Bond T - 55 ... +150 C stg (DCB) Substrate T Maximum Lead Temperature for Soldering 300 C Isolated Mounting Surface L T Plastic Body for 10s 260 C 4500V~ Electrical Isolation SOLD Molding Epoxies meet UL 94 V-0 F Mounting Force 20..120 / 4.5..27 N/lb. C Flammability Classification V 50/60Hz, 1 Minute 4500 V~ ISOL Weight 6 g Advantages High Voltage Package Easy to Mount Space Savings High Power Density Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications V V = V , I = 250A 4.0 6.5 V GS(th) DS GS D High Voltage Power Supplies I V = 20V, V = 0V 100 nA GSS GS DS Capacitor Discharge Applications Pulse Circuits I V = 3.6kV, V = 0V 5 A DSS DS GS Laser and X-Ray Generation Systems V = 4.5kV 10 A DS V = 3.6kV Note 2, T = 125C 15 A DS J R V = 10V, I = 10mA, Note 1 625 DS(on) GS D 2013 IXYS CORPORATION, All Rights Reserved DS100499A(10/13)IXTF02N450 Symbol Test Conditions Characteristic Values TM ISOPLUS i4-Pak (HV) Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J E A S U g V = 50V, I = 50mA, Note 1 90 150 mS Q A2 fs DS D C 246 pF iss T D C V = 0V, V = 25V, f = 1MHz 19 pF R oss GS DS 4 C 5.8 pF L1 rss 1 2 3 R Gate Input Resistance 76 Gi t 17 ns L d(on) Resistive Switching Times c t 48 ns r V = 10V, V = 500V, I = 0.5 I GS DS D D25 t 28 ns e A1 b1 b d(off) e1 R = 10 (External) G t 143 ns f Pin 1 = Gate Pin 2 = Soure Pin 3 = Drain Q 10.6 nC Pin 4 = Isolated g(on) Q V = 10V, V = 1kV, I = 0.5 I 3.3 nC gs GS DS D D25 Q 5.5 nC gd R 1.6 C/W thJC Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 200 mA S GS I Repetitive, Pulse Width Limited by T 800 mA SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t I = 200mA, -di/dt = 50A/ s, V = 100V 1.6 s rr F R Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. Part must be heatsunk for high-temp I measurement. DSS PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537