Advance Technical Information High Voltage V = 2500V IXTF1N250 DSS I = 1A Power MOSFET D25 R 40 DS(on) N-Channel Enhancement Mode (Electrically Isolated Tab) TM ISOPLUS i4-Pak Symbol Test Conditions Maximum Ratings V T = 25C to 150C 2500 V DSS J V T = 25C to 150C, R = 1M 2500 V DGR J GS 1 V Continuous 20 V 2 GSS 5 Isolated Tab V Transient 30 V GSM I T = 25C 1 A D25 C 1 = Gate 5 = Drain I T = 25C, Pulse Width Limited by T 6A DM C JM 2 = Source P T = 25C 110 W D C T - 55 ... +150 C J T 150 C JM Features T - 55 ... +150 C stg z Silicon Chip on Direct-Copper Bond T 1.6mm (0.062 in.) from Case for 10s 300 C L (DCB) Substrate T Plastic Body for 10s 260 C SOLD z Isolated Mounting Surface M Mounting Force 20..120 / 4.5..27 Nm/lb.in. z d 2500V Electrical Isolation z V 50/60Hz, 1min 2500 V~ Molding Epoxies meet UL 94 V-0 ISOL Flammability Classification Weight 5 g Advantages z Easy to Mount z Space Savings Symbol Test Conditions Characteristic Values z (T = 25C, Unless Otherwise Specified) Min. Typ. Max. High Power Density J BV V = 0V, I = 250A 2500 V DSS GS D Applications V V = V , I = 250A 2.0 4.0 V GS(th) DS GS D z I V = 20V, V = 0V 100 nA High Voltage Power Supplies GSS GS DS z Capacitor Discharge I V = 0.8 V , V = 0V 25 A DSS DS DSS GS z Pulse Circuits Note 2, T = 125C 25 A J R V = 10V, I = 0.5 I , Note 1 40 DS(on) GS D D25 2009 IXYS CORPORATION, All Rights Reserved DS100222(12/09)IXTF1N250 Symbol Test Conditions Characteristic Values TM ISOPLUS i4-Pak (HV) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 50V, I = 0.5 I , Note 1 1.0 1.8 mS fs DS D D25 C 1660 pF iss C V = 0V, V = 25V, f = 1MHz 77 pF oss GS DS C 23 pF rss t 69 ns d(on) Resistive Switching Times t 25 ns r V = 10V, V = 0.5 V , I = I GS DS DSS D D25 t 132 ns d(off) R = 5 (External) G t 39 ns f Q 41 nC g(on) Pin 1 = Gate Pin 2 = Source Q V = 10V, V = 600V, I = 0.5 I 8 nC Pin 3 = Drain gs GS DS D D25 Tab 4 = Isolated Q 16 nC gd R 1.13 C/W thJC R 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 1.5 A S GS I Repetitive, pulse width limited by T 6 A SM JM V I = 1A, V = 0V, Note 1 1.5 V SD F GS t I = 1A, -di/dt = 100A/s, V = 200V 2.5 s rr F R Notes 1. Pulse test, t 300s, duty cycle, d 2%. 2. Device must be heatsunk for high-temp I DSS measurement to avoid thermal runaway. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537