High Voltage V = 4500V IXTF1N450 DSS Power MOSFET I = 0.9A D25 R 80 DS(on) (Electrically Isolated Tab) TM ISOPLUS i4-Pak N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings 1 2 Isolated Tab V T = 25 C to 150 C 4500 V DSS J 5 V T = 25 C to 150 C, R = 1M 4500 V DGR J GS V Continuous 20 V GSS 1 = Gate 5 = Drain V Transient 30 V GSM 2 = Source I T = 25 C 0.9 A D25 C I T = 25 C, Pulse Width Limited by T 3.0 A DM C JM P T = 25 C 160 W D C Features T - 55 ... +150 C J T 150 C JM Silicon Chip on Direct-Copper Bond T - 55 ... +150 C stg (DCB) Substrate T Maximum Lead Temperature for Soldering 300 C Isolated Mounting Surface L T Plastic Body for 10s 260 C 4500V~ Electrical Isolation SOLD Molding Epoxies meet UL 94 V-0 F Mounting Force 20..120 / 4.5..27 N/lb. C Flammability Classification V 50/60Hz, 1 Minute 4500 V~ ISOL Weight 6 g Advantages High Voltage Package Easy to Mount Space Savings High Power Density Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications V V = V , I = 250A 3.5 6.0 V GS(th) DS GS D High Voltage Power Supplies I V = 20V, V = 0V 100 nA GSS GS DS Capacitor Discharge Applications Pulse Circuits I V = 3.6kV, V = 0V 5 A DSS DS GS Laser and X-Ray Generation Systems V = 4.5kV 25 A DS V = 3.6kV Note 2, T = 100C 15 A DS J R V = 10V, I = 50mA, Note 1 80 DS(on) GS D 2013 IXYS CORPORATION, All Rights Reserved DS100501D(10/13)IXTF1N450 Symbol Test Conditions Characteristic Values TM ISOPLUS i4-Pak (HV) Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 50V, I = 200mA, Note 1 0.40 0.70 S fs DS D C 1700 pF iss C V = 0V, V = 25V, f = 1MHz 80 pF oss GS DS C 29 pF rss R Gate Input Resistance 12 Gi t 30 ns d(on) Resistive Switching Times t 43 ns r V = 10V, V = 500V, I = 0.5A GS DS D t 73 ns d(off) R = 10 (External) G t 120 ns f Pin 1 = Gate Pin 2 = Soure Pin 3 = Drain Q 46 nC Pin 4 = Isolated g(on) Q V = 10V, V = 1kV, I = 0.5A 8 nC gs GS DS D Q 23 nC gd R 0.77 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 1 A S GS I Repetitive, Pulse Width Limited by T 5 A SM JM V I = 1A, V = 0V, Note 1 2.0 V SD F GS t I = 1A, -di/dt = 50A/ s, V = 100V 1.75 s rr F R Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. Part must be heatsunk for high-temp I measurement. DSS IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537