Preliminary Technical Information TM TrenchMV Power V = 100V IXTF200N10T DSS MOSFET I = 90A D25 R 7m DS(on) (Electrically Isolated Back Surface) N-Channel Enhancement Mode TM ISOPLUS i4-Pak (5-lead) Avalanche Rated Symbol Test Conditions Maximum Ratings V T = 25C to 175C 100 V DSS J V T = 25C to 175C, R = 1M 100 V DGR J GS V Transient 30 V GSM I T = 25C90 A D25 C I T = 25C, Pulse Width Limited by T 500 A DM C JM G I T = 25C40 A A C S S E T = 25C 1.5 J D AS C D P T = 25C 156 W D C G = Gate D = Drain T -55 ... +175 C J S = Source T 175 C JM T -55 ... +175 C stg Features T 1.6mm (0.062in.) from Case for 10s 300 C L Plastic Body for 10 seconds 260 C Silicon Chip on Direct-Copper Bond V 50/60Hz, t = 1 minute, I < 1mA, RMS 2500 V (DCB) Substrate ISOL ISOL Isolated Mounting Surface M Mounting Force 120..120 / 4.5..27 N/lb. d Avalanche Rated Weight 6 g 2500V Electrical Isolation Advantages Easy to Mount Space Savings High Power Density Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 250A 100 V DSS GS D Automotive V V = V , I = 250A 2.5 4.5 V - Motor Drives GS(th) DS GS D - High Side Switch I V = 20V, V = 0V 200 nA GSS GS DS - 12V Battery I V = V , V = 0V 5 A - ABS Systems DSS DS DSS GS DC/DC Converters and Off-Line UPS T = 150C 250 A J Primary - Side Switch R V = 10V, I = 50A, Notes 1 7 m DS(on) GS D High Current Switching Applications 2009 IXYS CORPORATION, All Rights Reserved DS99747B(03/09)IXTF200N10T Symbol Test Conditions Characteristic Values TM ISOPLUS i4-Pak (5-Lead) (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J (IXTF) Outline g V = 10V, I = 60A, Note 1 60 96 S fs DS D C 9400 pF iss C V = 0V, V = 25V, f = 1MHz 1087 pF oss GS DS C 140 pF rss t 35 ns d(on) Resistive Switching Times t 31 ns r V = 10V, V = 0.5 V , I = 50A GS DS DSS D t 45 ns d(off) R = 3.3 (External) G t 34 ns f Q 152 nC g(on) Q V = 10V, V = 0.5 V , I = 50A 47 nC gs GS DS DSS D Q 47 nC gd R 0.96 C/W thJC R 0.21 C/W thCH Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 200 A S GS I Repetitive, Pulse Width Limited by T 500 A SM JM V I = 50A, V = 0V, Note 1 1.0 V F GS SD t 76 ns rr I = 100A, V = 0V,-di/dt = 100A/s F GS Q 205 nC RM Leads: V = 50V R I 5.4 A RM 1. Gate 2, 3. Source 4, 5. Drain 6. Isolated. Notes: 1. Pulse Test, t 300s Duty Cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. All leads and tab are tin plated. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537