High Voltage IXTH02N250 V = 2500V DSS Power MOSFETs I = 200mA IXTV02N250S D25 R 450 DS(on) N-Channel Enhancement Mode Fast Intrinsic Diode TO-247 (IXTH) G D D (Tab) S Symbol Test Conditions Maximum Ratings V T = 25C to 150C 2500 V DSS J PLUS220SMD (IXTV S) V T = 25C to 150C, R = 1M 2500 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM I T = 25C 200 mA G D25 C S I T = 25C, Pulse Width Limited by T 600 mA DM C JM D (Tab) P T = 25C83W D C G = Gate D = Drain T - 55 ... +150 C J S = Source Tab = Drain T 150 C JM T - 55 ... +150 C stg T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10s 260 C SOLD M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in d F Mounting Force (PLUS220) 11..65 / 25..14.6 N/lb. C Features Weight TO-247 6 g PLUS220 4 g z Fast Intrinsic Diode z Low Package Inductance Advantages z Easy to Mount Symbol Test Conditions Characteristic Values z Space Savings (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250A 2500 V DSS GS D Applications V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D z High Voltage Power Supplies I V = 20V, V = 0V 100 nA GSS GS DS z Capacitor Discharge z I V = 0.8 V , V = 0V 5 A Pulse Circuits DSS DS DSS GS T = 125C 500 A J R V = 10V, I = 50mA, Note 1 450 DS(on) GS D 2013 IXYS CORPORATION, All Rights Reserved DS100187E(04/13) IXTH02N250 IXTV02N250S Symbol Test Conditions Characteristic Values TO-247 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 100V, I = 0.5 I , Note 1 88 145 mS fs DS D D25 C 116 pF iss C V = 0V, V = 25V, f = 1MHz 8 pF P oss GS DS 1 2 3 C 3 pF rss t 19 ns d(on) Resistive Switching Times 19 ns t r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 32 ns d(off) R = 100 (External) G t 33 ns e f Terminals: 1 - Gate 2 - Drain Q 7.4 nC g(on) 3 - Source Q V = 10V, V = 0.5 V , I = 0.5 I 0.7 nC Dim. Millimeter Inches gs GS DS DSS D D25 Min. Max. Min. Max. Q 5.3 nC gd A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 R 1.5 C/W thJC A 2.2 2.6 .059 .098 2 R 0.25 C/W b 1.0 1.4 .040 .055 thCS b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 Source-Drain Diode e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 Symbol Test Conditions Characteristic Values L1 4.50 .177 (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 I V = 0V 200 mA S GS R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC I Repetitive, Pulse Width Limited by T 800 mA SM JM V I = 100mA, V = 0V, Note 1 2.0 V PLUS220SMD Outline SD F GS E A E1 L2 A1 I = 200mA, -di/dt = 50A/s, V = 100V E1 t 1.5 s F R rr D A3 L3 L4 L L1 Note 1. Pulse test, t 300 s, duty cycle, d 2%. 2X b c e A2 1. Gate 2. Drain 3. Source 4. Drain *Additional provisions for lead to lead voltage isolation are required at V > 1200V. DS IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537