Preliminary Technical Information TM V = 200V IXTQ102N20T Trench DSS I = 102A IXTH102N20T Power MOSFETs D25 R 23m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) G Symbol Test Conditions Maximum Ratings D S V T = 25 C to 175 C 200 V DSS J D (Tab) V T = 25 C to 175 C, R = 1M 200 V DGR J GS TO-247 (IXTH) V Transient 30 V GSM I T = 25 C 102 A D25 C I Lead Current Limit, RMS 75 A LRMS I T = 25 C, pulse width limited by T 250 A DM C JM G D D (Tab) I T = 25 C5 A S A C E T = 25 C 1.2 J AS C G = Gate D = Drain S = Source Tab = Drain dv/dt I I , V V , T 175C 7 V/ns S DM DD DSS J P T = 25 C 750 W D C T -55 ... +175 C J T 175 C JM T -55 ... +175 C Features stg T Maximum Lead Temperature for Soldering 300 C L Ultra-low On Resistance T Plastic Body for 10s 260 C SOLD Unclamped Inductive Switching (UIS) M Mounting torque 1.13 / 10 Nm/lb.in rated d Low package inductance Weight TO-3P 5.5 g - easy to drive and to protect TO-247 6.0 g 175 C Operating Temperature Advantages Easy to mount Space savings Symbol Test Conditions Characteristic Values High power density (T = 25 C unless otherwise specified) Min. Typ. Max. J Applications BV V = 0V, I = 250 A 200 V DSS GS D V V = V , I = 1mA 2.5 4.5 V Automotive GS(th) DS GS D - Motor Drives I V = 20V, V = 0V 200 nA GSS GS DS - High Side Switch - 12V Battery I V = V , V = 0V 5 A DSS DS DSS GS - ABS Systems T = 150 C 250A J DC/DC Converters and Off-line UPS R V = 10V, I = 0.5 I , Note 1 18 23 m DS(on) GS D D25 Primary- Side Switch High Current Switching Applications 2013 IXYS CORPORATION, All Rights Reserved DS99821A(10/13) IXTQ102N20T IXTH102N20T Symbol Test Conditions Characteristic Values TO-247 Outline (T = 25 C unless otherwise specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 55 92 S fs DS D D25 C 6800 pF iss P 1 2 3 C V = 0V, V = 25V, f = 1MHz 722 pF oss GS DS C 126 pF rss t 19 ns d(on) Resistive Switching Times t 26 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 50 ns d(off) e R = 2.5 (External) G t 25 ns f Terminals: 1 - Gate 2 - Drain Q 114 nC g(on) Dim. Millimeter Inches Min. Max. Min. Max. Q V = 10V, V = 0.5 V , I = 25A 34 nC gs GS DS DSS D A 4.7 5.3 .185 .209 Q 31 nC A 2.2 2.54 .087 .102 gd 1 A 2.2 2.6 .059 .098 2 R 0.20C/W thJC b 1.0 1.4 .040 .055 R 0.25 C/W b 1.65 2.13 .065 .084 thCH 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 Source-Drain Diode e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 Symbol Test Conditions Characteristic Values L1 4.50 .177 T = 25 C unless otherwise specified) Min. Typ. Max. J P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 I V = 0V 102 A S GS R 4.32 5.49 .170 .216 I Repetitive, pulse width limited by T 330 A SM JM TO-3P Outline V I = 50A, V = 0V, Note 1 1.2 V SD F GS t 130 ns I = 50A, V = 0V, -di/dt = 100A/s rr F GS V = 50V R Note: 1. Pulse test, t 300 s, duty cycle, d 2%. Pins: 1 - Gate 2 - Drain 3 - Source 4 - Drain PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537