V = -500 V Standard Power MOSFET DSS I = -11 A P-Channel Enhancement Mode IXTH 11P50 D25 Avalanche Rated R = 0.75 IXTT 11P50 DS(on) Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) V T = 25C to 150C -500 V DSS J V T = 25C to 150C R = 1 M -500 V DGR J GS V Continuous 20 V GS (TAB) V Transient 30 V D GSM I T = 25C -11 A D25 C I T = 25C, pulse width limited by T -44 A DM C J TO-268 (IXTT) Case Style I T = 25C -11 A AR C E T = 25C30mJ AR C P T = 25C 300 W G D C (TAB) D T -55 ... +150 C S J T 150 C JM G = Gate D = Drain T -55 ... +150 C S = Source TAB = Drain stg T Maximum lead temperature for soldering 300 C L 1.6 mm (0.062 in.) from case for 10 s M Mounting torque (TO-247) 1.13/10 Nm/lb.in. d Weight TO-247 AD 6 g TO-268 4 g Features z International standard packages z TM Low R HDMOS process DS (on) z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) Symbol Test Conditions Characteristic Values rated (T = 25C, unless otherwise specified) z J Low package inductance min. typ. max. - easy to drive and to protect V V = 0 V, I = -250 A -500 V DSS GS D Advantages BV Temperature Coefficient 0.054 %/K DSS z Easy to mount V V = V , I = -250 A -3.0 -5.0 V GS(th) DS GS D z Space savings V Temperature Coefficient -0.122 %/K GS(th) z High power density I V = 20 V , V = 0 100 nA GSS GS DC DS I V = 0.8 V T =25C -200 A DSS DS DSS J V = 0 V T = 125C-1mA GS J R V = -10 V, I = 0.5 I 0.75 DS(on) GS D D25 R Temperature Coefficient 0.6 %/K DS(on) DS94535J(01/05) 2005 IXYS All rights reservedIXTH 11P50 IXTT 11P50 Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25C, unless otherwise specified) J min. typ. max. g V = -10 V I = I , pulse test 5 9 S fs DS D D25 1 2 3 C 4700 pF iss C V = 0 V, V = -25 V, f = 1 MHz 430 pF oss GS DS C 135 pF rss t 33 ns d(on) t V = -10 V, V = 0.5 V , I = 0.5 I 27 ns Terminals: 1 - Gate 2 - Drain r GS DS DSS D D25 3 - Source Tab - Drain t R = 4.7 (External) 35 ns d(off) G Dim. Millimeter Inches t 35 ns Min. Max. Min. Max. f A 4.7 5.3 .185 .209 Q 130 nC A 2.2 2.54 .087 .102 G(on) 1 A 2.2 2.6 .059 .098 2 Q V = -10 V, V = 0.5 V , I = 0.5 I 46 nC GS GS DS DSS D D25 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 Q 92 nC 1 GD b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 R 0.42 K/W thJC D 20.80 21.46 .819 .845 R (TO-247) 0.25 K/W E 15.75 16.26 .610 .640 thCS e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Source-Drain Diode Characteristic Values (T = 25C, unless otherwise specified) J TO-268 Outline Symbol Test Conditions min. typ. max. I V = 0 10P50 -10 A S GS 11P50 -11 A I Repetitive pulse width limited by T 10P50 -40 A SM JM 11P50 -44 A V I = I , V = 0 V, -3 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = I , di/dt = 100 A/s 500 ns rr F S Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2