V = - 600V Power MOSFETs IXTT10P60 DSS I = - 10A IXTH10P60 D25 R 1 DS(on) P-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings V T = 25C to 150C - 600 V DSS J TO-247 (IXTH) V T = 25C to 150C, R = 1M - 600 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM I T = 25C - 10 A D25 C G D D (Tab) I T = 25C, Pulse Width Limited by T - 40 A DM C JM S I T = 25C - 10 A A C E T = 25C3J G = Gate D = Drain AS C S = Source Tab = Drain P T = 25C 300 W D C T - 55 ... +150 C J T 150 C JM T - 55 ... +150 C stg Features T 1.6mm (0.062in.) from Case for 10s 300 C L z International Standard Packages T Plastic Body for 10 seconds 260 C sold TM z Low R HDMOS Process DS (on) M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. z d Rugged Polysilicon Gate Cell Structure z Avalanche Rated Weight TO-268 4 g z Low Package Inductance TO-247 6 g - Easy to Drive and to Protect Advantages Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. z J Easy to Mount z Space Savings BV V = 0V, I = - 250A - 600 V DSS GS D z High Power Density V V = V , I = - 250A - 3.0 - 5.0 V GS(th) DS GS D I V = 20V, V = 0V 100 nA GSS GS DS Applications I V = 0.8 V , V = 0V - 25 A DSS DS DSS GS z High-Side Switching T = 125C -1 mA z J Push Pull Amplifiers z DC Choppers R V = 10V, I = 0.5 I , Note 1 1 DS(on) GS D D25 z Automatic Test Equipment 2013 IXYS CORPORATION, All Rights Reserved DS98849E(01/13) IXTT10P60 IXTH10P60 Symbol Test Conditions Characteristic Values TO-247 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 5 10.5 S fs DS D D25 C 4665 pF iss P C V = 0V, V = - 25V, f = 1MHz 437 pF 1 2 3 oss GS DS C 157 pF rss t 33 ns d(on) Resistive Switching Times t 27 ns r V = -10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 85 ns d(off) e R = 4.7 (External) G t 35 ns f Terminals: 1 - Gate 2 - Drain 3 - Source Q 135 nC g(on) Dim. Millimeter Inches Q V = -10V, V = 0.5 V , I = 0.5 I 30 nC gs GS DS DSS D D25 Min. Max. Min. Max. Q 45 nC A 4.7 5.3 .185 .209 gd A 2.2 2.54 .087 .102 1 R 0.42 C/W A 2.2 2.6 .059 .098 thJC 2 b 1.0 1.4 .040 .055 R TO-247 0.21 C/W thCS 1.65 2.13 .065 .084 b 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 Source-Drain Diode P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 Symbol Test Conditions Characteristic Values S 6.15 BSC 242 BSC (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J TO-268 Outline I V = 0V - 10 A S GS I Repetitive, Pulse Width Limited by T - 40 A SM JM V I = I , V = 0V, Note 1 - 3.0 V SD F S GS I = -10A, -di/dt = -100A/s t 500 ns F rr V = -100V, V = 0V R GS Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain Note 1: Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537