Advance Technical Information TM LinearL2 Power V = 100V IXTH110N10L2 DSS MOSFET w/ Extended I = 110A IXTT110N10L2 D25 R 18m FBSOA DS(on) N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings G V T = 25C to 150C 100 V D D (Tab) DSS J S V T = 25C to 150C, R = 1M 100 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM TO-268 (IXTT) I T = 25C 110 A D25 C I T = 25C, Pulse Width Limited by T 300 A DM C JM G I T = 25C 110 A A C S E T = 25C 3 J AS C D (Tab) P T = 25C 600 W D C T -55 to +150 C J G = Gate D = Drain T +150 C JM S = Source Tab = Drain T -55 to +150 C stg T 1.6mm (0.063in) from Case for 10s 300 C L T Plastic Body for 10s 260 C SOLD Features M Mounting Torque (TO-247) 1.13/10 Nm/lb.in. d z Designed for Linear Operation Weight TO-247 6.0 g z TO-268 4.0 g International Standard Packages z Avalanche Rated z Integrated Gate Resistor for Easy Paralleling z Guaranteed FBSOA at 75C Symbol Test Conditions Characteristic Values Advantages (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z Easy to Mount BV V = 0V, I = 250A 100 V DSS GS D z Space Savings V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D z High Power Density I V = 20V, V = 0V 100 nA GSS GS DS Applications I V = V , V = 0V 5 A DSS DS DSS GS T = 125C 50 A z J Solid State Circuit Breakers z R V = 10V, I = 0.5 I , Note 1 18 m Soft Start Controls DS(on) GS D D25 z Linear Amplifiers z Programmable Loads z Current Regulators 2010 IXYS CORPORATION, All Rights Reserved DS100235(01/10)IXTH110N10L2 IXTT110N10L2 Symbol Test Conditions Characteristic Values TO-247 (IXTH) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 45 55 65 S fs DS D D25 C 10.5 nF iss C V = 0V, V = 25V, f = 1MHz 1585 pF P oss GS DS 1 2 3 C 420 pF rss R Gate Input Resistance 1.8 Gi t 28 ns d(on) Resistive Switching Times t 130 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 e t 99 ns d(off) R = 2.2 (External) G Terminals: 1 - Gate 2 - Drain t 24 ns f 3 - Source Tab - Drain Q 260 nC g(on) Dim. Millimeter Inches Q V = 10V, V = 0.5 V , I = 0.5 I 52 nC Min. Max. Min. Max. gs GS DS DSS D D25 A 4.7 5.3 .185 .209 Q 106 nC gd A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 R 0.21 C/W 2 thJC b 1.0 1.4 .040 .055 R TO-247 0.21 C/W b 1.65 2.13 .065 .084 thCS 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 Safe Operating Area Specification E 15.75 16.26 .610 .640 Characteristic Values e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 Symbol Test Conditions Min. Typ. Max. L1 4.50 .177 SOA V = 80V, I = 3.6A, T = 75C, tp = 5s 360 W P 3.55 3.65 .140 .144 DS D C Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC TO-268 (IXTT) Outline Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 110 A S GS I Repetitive, Pulse Width Limited by T 440 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 230 ns rr I = 55A, -di/dt = 100A/s, F I 19.4 A RM V = 50V, V = 0V R GS Q 2.2 C RM Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Note 1. Pulse test, t 300s duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537