The IXTH120P065T is a power metal–oxide–semiconductor field-effect transistor (MOSFET) designed for use in industrial, power, and automotive applications. It has a drain-source voltage of 65V, a current rating of 120 Amps, and an on-resistance Rdson of 0.01O. Produced by the IXYS Corporation, this MOSFET is suitable for high power, high speed, and high efficiency switching. It features a low RDS(ON), high ruggedness, high dV/dt, fast switching, and low gate-charge. Its construction and packaging makes it suitable for through-hole, surface-mount, and hybrid applications.