TM Linear Power V = 1000V IXTH12N100L DSS MOSFET w/ Extended I = 12A D25 R 1.3 FBSOA DS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1000 V DSS J V T = 25C to 150C, R = 1M 1000 V DGR J GS V Continuous 30 V GSS G D Tab V Transient 40 V S GSM I T = 25C 12 A D25 C G = Gate D = Drain I T = 25C, Pulse Width Limited by T 25 A DM C JM S = Source Tab = Drain I T = 25C 12 A A C E T = 25C 1.5 J AS C P T = 25C 400 W D C T -55...+150 C J T 150 C JM Features T -55...+150 C stg International Standard Package T 1.6mm (0.063 in.) from Case for 10s 300 C L Designed for Linear Operation T Plastic Body for 10s 260 C SOLD Avalanche Rated M Mounting Torque 1.13/10 Nm/lb.in. Molding Epoxy Meets UL94 V-0 d Flammability Classification Weight 6 g Advantages Easy to Mount Space Savings High Power Density Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 250A 1000 V DSS GS D Programmable Loads V V = V , I = 250A 3.5 5.5 V GS(th) DS GS D Current Regulators I V = 30V, V = 0V 100 nA DC-DC Converters GSS GS DS Battery Chargers I V = V , V = 0V 50 A DSS DS DSS GS DC Choppers T = 125C 500 A J Temperature and Lighting Controls R V = 20V, I = 0.5 I , Note 1 1.3 DS(on) GS D DSS 2010 IXYS CORPORATION, All Rights Reserved DS99126B(04/10) IXTH12N100L Symbol Test Conditions Characteristic Values TO-247 (IXTH) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 3.0 5.0 S fs DS D DSS C 2500 pF iss P C V = 0V, V = 25V, f = 1MHz 300 pF oss GS DS 1 2 3 C 95 pF rss t 30 ns d(on) Resistive Switching Times t 55 ns r V = 15V, V = 0.5 V , I = 0.5 I GS DS DSS D DSS t 110 ns d(off) R = 4.7 (External) G e t 65 ns f Terminals: 1 - Gate 2 - Drain Q 155 nC 3 - Source g(on) Q V = 20V, V = 0.5 V , I = 0.5 I 35 nC gs GS DS DSS D DSS Dim. Millimeter Inches Min. Max. Min. Max. Q 55 nC gd A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 R 0.31 C/W 1 thJC A 2.2 2.6 .059 .098 2 R 0.21 C/W thCS b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 Safe-Operating-Area Specification E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 Symbol Test Conditions Characteristic Values L1 4.50 .177 Min. Typ. Max. P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 SOA V = 800V, I = 0.25A, T = 60C 200 W DS D C R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 12 A S GS I Repetitive, Pulse Width Limited by T 48 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 1000 ns rr I = I , -di/dt = 100A/s, V = 100V, V = 0V F S R GS Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537