High Voltage V = 1500V IXTT12N150 DSS I = 12A Power MOSFET IXTH12N150 D25 R 2.2 DS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings S V T = 25 C to 150 C 1500 V DSS J D (Tab) V T = 25 C to 150 C, R = 1M 1500 V DGR J GS V Continuous 30 V GSS TO-247 (IXTH) V Transient 40 V GSM I T = 25 C12A D25 C I T = 25 C, Pulse Width Limited by T 40 A DM C JM I T = 25C 6 A G A C D D (Tab) E T = 25C 750 mJ S AS C dv/dt I I , V V ,T 150 C 5 V/ns S DM DD DSS J G = Gate D = Drain P T = 25 C 890 W D C S = Source Tab = Drain T - 55 ... +150 C J T 150 C JM T - 55 ... +150 C stg T 1.6mm (0.062 in.) From Case for 10s 300 C L T Plastic Body for 10s 260 C SOLD Features M Mounting Torque 1.13 / 10 Nm/lb.in. d International Standard Packages Weight TO-268 4.0 g Molding Epoxies Weet UL 94 V-0 TO-247 6.0 g Flammability Classification Fast Intrinsic Diode Low Package Inductance Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. Advantages J BV V = 0V, I = 1mA 1500 V DSS GS D Easy to Mount Space Savings V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D High Power Density I V = 30V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 25 A DSS DS DSS GS Applications T = 125C 500A J High Voltage Power Supplies R V = 10V, I = 0.5 I , Note 1 2.2 DS(on) GS D D25 Capacitor Discharge Pulse Circuits 2015 IXYS CORPORATION, All Rights Reserved DS100425C(6/15)IXTT12N150 IXTH12N150 Symbol Test Conditions Characteristic Values TO-268 Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 8 13 S fs DS D D25 C 3720 pF iss C V = 0V, V = 25V, f = 1MHz 240 pF oss GS DS C 80 pF rss t 26 ns d(on) Resistive Switching Times t 16 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 53 ns d(off) Terminals: 1 - Gate 2,4 - Drain R = 2 (External) G 3 - Source t 14 ns f Q 106 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 17 nC gs GS DS DSS D D25 Q 50 nC gd R 0.14 C/W thJC R TO-247 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 12 A S GS I Repetitive, Pulse Width Limited by T 48 A TO-247 Outline SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 1.2 s rr I = 6A, -di/dt = 100A/ s F I 24.5 A P RM 1 2 3 V = 100V, V = 0V R GS Q 14.8 C RM e Note 1. Pulse test, t 300 s, duty cycle, d 2%. Terminals: 1 - Gate 2 - Drain 3 - Source Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537