IXTH 13N110 V = 1100 V DSS TM MegaMOS FET I = 13 A D25 R = 0.92 DS(on) N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD V T = 25C to 150C 1100 V DSS J V T = 25C to 150C R = 1 M 1100 V DGR J GS V Continuous 20 V D (TAB) GS V Transient 30 V GSM I T = 25C13A D25 C G = Gate, D = Drain, I T = 25C, pulse width limited by T 52 A DM C JM S = Source, TAB = Drain P T = 25C 360 W D C T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg M Mounting torque 1.13/10 Nm/lb.in. d Weight 6g Maximum lead temperature for soldering 300 C Features 1.6 mm (0.062 in.) from case for 10 s l International standard package JEDEC TO-247 AD TM l Low R HDMOS process DS (on) l Rugged polysilicon gate cell structure l Fast switching times Applications Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) J l Switch-mode and resonant-mode min. typ. max. power supplies l Motor controls V V = 0 V, I = 3 mA 1100 V l DSS GS D Uninterruptible Power Supplies (UPS) l V V = V , I = 250 A 2 4.5 V DC choppers GS(th) DS GS D I V = 20 V , V = 0 100 nA GSS GS DC DS Advantages I V = 0.8 V T = 25C 500 A DSS DS DSS J V = 0 V T = 125C3mA l GS J Easy to mount with 1 screw (isolated mounting screw hole) R V = 10 V, I = 0.5 I 0.80 0.92 DS(on) GS D D25 l Space savings Pulse test, t 300 s, duty cycle d 2 % l High power density IXYS reserves the right to change limits, test conditions, and dimensions. 92781F (3/98) 2000 IXYS All rights reserved 1 - 2IXTH 13N110 Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25C, unless otherwise specified) J min. typ. max. g V = 10 V I = 6.5 A, pulse test 10 S fs DS D C 5650 pF 1 2 3 iss C V = 0 V, V = 25 V, f = 1 MHz 400 pF oss GS DS C 150 pF rss t 24 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 21 ns r GS DS DSS D D25 Terminals: 1 - Gate 2 - Drain t R = 1 , (External) 80 ns d(off) G 3 - Source Tab - Drain t 36 ns f Dim. Millimeter Inches Min. Max. Min. Max. Q 195 nC g(on) A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 Q V = 10 V, V = 0.5 V , I = 0.5 I 28 nC 1 gs GS DS DSS D D25 A 2.2 2.6 .059 .098 2 Q 85 nC gd b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 R 0.35 K/W b 2.87 3.12 .113 .123 2 thJC C .4 .8 .016 .031 R 0.25 K/W thCK D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 Source-Drain Diode Characteristic Values P 3.55 3.65 .140 .144 (T = 25C, unless otherwise specified) J Q 5.89 6.40 0.232 0.252 Symbol Test Conditions min. typ. max. R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC I V = 0 V 13 A S GS I Repetitive pulse width limited by T 52 A SM JM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = I , -di/dt = 100 A/ s, V = 100 V 850 ns rr F S R IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 2000 IXYS All rights reserved 2 - 2 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025