Preliminary Technical Information TM LinearL2 Power V = 75V IXTT140N075L2HV DSS MOSFET w/Extended I = 140A IXTH140N075L2 D25 FBSOA R < 11m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXTT) G S Symbol Test Conditions Maximum Ratings D (Tab) V T = 25 C to 150 C75 V DSS J V T = 25 C to 150 C, R = 1M 75 V DGR J GS TO-247 (IXTH) V Continuous 20 V GSS V Transient 30 V GSM I T = 25 C 140 A D25 C G I T = 25 C, Pulse Width Limited by T 500 A DM C JM D S D (Tab) I T = 25 C 140 A A C E T = 25 C 1.5 J AS C G = Gate D = Drain P T = 25 C 540 W S = Source Tab = Drain D C T -55...+150 C J T 150 C JM T -55...+150 C stg T Maximum Lead Temperature for Soldering 300 C L Features T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Designed for Linear Operation M Mounting Torque (TO-247) 1.13/10 Nm/lb.in d International Standard Packages Weight TO-268HV 4 g AvalancheRated TO-247 6 g Guaranteed FBSOA at 75 C Advantages Easy to Mount Space Savings High Power Density Applications Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Solid State Circuit Breakers BV V = 0V, I = 250A 75 V DSS GS D Soft Start Controls Linear Amplifiers V V = V , I = 250A 2.0 4.5 V GS(th) DS GS D Programmable Loads I V = 20V, V = 0V 100 nA GSS GS DS Current Regulators I V = V , V = 0V 5 A DSS DS DSS GS T = 125C 25 A J R V = 10V, I = 0.5 I , Note 1 11 m DS(on) GS D D25 2017 IXYS CORPORATION, All rights reserved DS100774A(5/17) IXTT140N075L2HV IXTH140N075L2 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 50 65 80 S fs DS D R Gate Input Resistance 1.24 Gi C 9300 pF iss C V = 0V, V = 25V, f = 1MHz 2190 pF oss GS DS C 750 pF rss t 26 ns d(on) Resistive Switching Times t 83 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 100 ns d(off) R = 2 (External) G t 33 ns f Q 275 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 40 nC gs GS DS DSS D D25 Q 108 nC gd R 0.23 C/W thJC R TO-247 0.21 C/W thCS Safe Operating Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA V = 75V, I = 4.35A, T = 75 C, Tp = 5s 326 W DS D C Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 140 A S GS I Repetitive, pulse width limited by T 560 A SM JM V I = 100A, V = 0V, Note 1 1.4 V SD F GS t 200 ns rr I = 70A, -di/dt = 100A/ s, F I 14.0 A RM V = 37.5V, V = 0V R GS Q 1.4 C RM Note: 1. Pulse test, t 300 s duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537