TM TrenchP V = - 50V IXTA140P05T DSS I = - 140A Power MOSFETs IXTP140P05T D25 R 9m DS(on) IXTH140P05T P-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings V T = 25C to 150C - 50 V DSS J V T = 25C to 150C, R = 1M - 50 V DGR J GS V Continuous 15 V G GSS D D (Tab) S V Transient 25 V GSM TO-247 (IXTH) I T = 25C (Chip Capability) -140 A D25 C I Lead Current Limit, RMS -120 A LRMS I T = 25C, Pulse Width Limited by T - 420 A DM C JM I T = 25C - 70 A A C G E T = 25C1J AS C D D (Tab) S P T = 25C 298 W D C T -55 ... +150 C G = Gate D = Drain J T 150 C S = Source Tab = Drain JM T -55 ... +150 C stg T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10s 260 C SOLD Features M Mounting Torque (TO-220 & TO-247) 1.13/10 Nm/lb.in. d z International Standard Packages Weight TO-263 2.5 g z Avalanche Rated TO-220 3.0 g z TO-247 6.0 g Extended FBSOA z Fast Intrinsic Diode z Low R and Q DS(ON) G Advantages Symbol Test Conditions Characteristic Values z Easy to Mount (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z Space Savings BV V = 0V, I = - 250A - 50 V z DSS GS D High Power Density V V = V , I = - 250A - 2.0 - 4.0 V GS(th) DS GS D Applications I V = 15V, V = 0V 100 nA GSS GS DS z High-Side Switching I V = V V = 0V -10 A DSS DS DSS, GS z Push Pull Amplifiers T = 125C - 750 A J z DC Choppers R V = -10V, I = 0.5 I , Note 1 9 m z DS(on) GS D D25 Automatic Test Equipment z Current Regulators z Battery Charger Applications 2013 IXYS CORPORATION, All Rights Reserved DS100027C(01/13) IXTA140P05T IXTP140P05T IXTH140P05T Symbol Test Conditions Characteristic Values TO-247 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 44 72 S fs DS D D25 C 13.5 nF iss C V = 0V, V = - 25V, f = 1MHz 1640 pF oss GS DS C 640 pF rss t 28 ns d(on) Resistive Switching Times t 34 ns r = -10V, V = - 30V, I = - 50A V GS DS D t 38 ns d(off) R = 1 (External) G t 25 ns f Q 200 nC g(on) Q V = -10V, V = 0.5 V , I = 0.5 I 50 nC gs GS DS DSS D D25 1 = Gate 2 = Drain Q 65 nC 3 = Source gd R 0.42 C/W thJC R TO-220 0.50 C/W thCS TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V -140 A S GS I Repetitive, Pulse Width Limited by T - 560 A SM JM V I = - 70A, V = 0V, Note 1 -1.3 V SD F GS TO-220 Outline t 53 ns rr I = - 70A, -di/dt = -100A/s F Q 58 nC RM V = - 25V, V = 0V R GS I - 2.2 A RM Note 1. Pulse test, t 300s, duty cycle, d 2%. TO-263 Outline Pins: 1 - Gate 2 - Drain 3 - Source Pins: 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537