X-On Electronics has gained recognition as a prominent supplier of IXTH15N50L2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTH15N50L2 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXTH15N50L2 IXYS

IXTH15N50L2 electronic component of IXYS
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Part No.IXTH15N50L2
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET LINEAR L2 SERIES MOSFET 500V 15A
Datasheet: IXTH15N50L2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 13.818 ea
Line Total: USD 13.82 
Availability - 457
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
457
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 13.818
2 : USD 9.688
5 : USD 9.156
510 : USD 8.89
1020 : USD 8.834

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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We are delighted to provide the IXTH15N50L2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTH15N50L2 and other electronic components in the MOSFETs category and beyond.

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TM Linear L2 V = 500V IXTA15N50L2 DSS Power MOSFETs I = 15A IXTP15N50L2 D25 R 480m w/ Extended FBSOA DS(on) IXTH15N50L2 N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) V T = 25C to 150C 500 V DSS J V T = 25C to 150C, R = 1M 500 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM G I T = 25C15A D D (Tab) D25 C S I T = 25C, Pulse Width Limited by T 35 A DM C JM TO-247 (IXTH) I T = 25C 15 A A C E T = 25C 750 mJ AS C P T = 25C 300 W D C T -55 ... +150 C G J D T 150 C D (Tab) JM S T -55 ... +150 C stg T 1.6mm (0.062 in.) from Case for 10s 300 C L G = Gate D = Drain T Plastic Body for 10s 260 C SOLD S = Source Tab = Drain M Mounting Torque (TO-220 & TO-247) 1.13/10 Nm/lb.in. d Features Weight TO-263 2.5 g TO-220 3.0 g z TO-247 6.0 g Designed for Linear Operation z International Standard Packages z Avalanche Rated z Molding Epoxies Meet UL 94 V-0 Flammability Classification z Guaranteed FBSOA at 75C Advantages Symbol Test Conditions Characteristic Values z Easy to Mount (T = 25C, Unless Otherwise Specified) Min. Typ. Max. z J Space Savings z High Power Density BV V = 0V, I = 250A 500 V DSS GS D V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D Applications I V = 20V, V = 0V 100 nA GSS GS DS z I V = V , V = 0V 25 A Solid State Circuit Breakers DSS DS DSS GS z T = 125C 200 A Soft Start Controls J z Linear Amplifiers R V = 10V, I = 0.5 I , Note 1 480 m DS(on) GS D D25 z Programmable Loads z Current Regulators 2011 IXYS CORPORATION, All Rights Reserved DS100054B(12/11) IXTA15N50L2 IXTP15N50L2 IXTH15N50L2 Symbol Test Conditions Characteristic Values TO-247 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 4.5 6.3 8.0 S fs DS D D25 C 4080 pF iss C V = 0V, V = 25V, f = 1MHz 265 pF oss GS DS C 68 pF rss t 38 ns d(on) Resistive Switching Times t 73 ns r V = 10V, 0.5 V , I = 0.5 I GS DSS D D25 t 110 ns d(off) R = 10 (External) G t 65 ns f Q 123 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 20 nC gs GS DS DSS D D25 1 = Gate 2 = Drain Q 72 nC gd 3 = Source R 0.42 C/W thJC R (TO-220) 0.50 C/W thCS (TO-247) 0.25 C/W Safe Operating Area Specification Characteristic Values Symbol Test Conditions Min. Typ. Max. SOA V = 400V, I = 375mA, T = 75C, tp = 2s 150 W DS D C Source-Drain Diode Symbol Test Conditions Characteristic Values TO-220 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 15 A S GS I Repetitive, pulse width limited by T 60 A SM JM V I = 15A, V = 0V, Note 1 1.5 V SD F GS I = 15A, -di/dt = 100A/s, V = 100V, V = 0V t 570 ns F R GS rr Note 1: Pulse test, t 300s, duty cycle, d 2%. TO-263 Outline Pins: 1 - Gate 2 - Drain 3 - Source 1 = Gate 2 = Drain 3 = Source 4 = Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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