Depletion Mode V = 100V IXTT16N10D2 DSX MOSFET I > 16A IXTH16N10D2 D(on) R 64m DS(on) D N-Channel TO-268 (IXTT) G G S S D (Tab) Symbol Test Conditions Maximum Ratings TO-247 (IXTH) V T = 25 C to 175 C 100 V DSX J V T = 25 C to 175 C, R = 1M 100 V DGX J GS V Continuous 20 V GSX G V Transient 30 V GSM D S D (Tab) P T = 25 C 830 W D C T - 55 ... +175 C J G = Gate D = Drain T 175 C JM S = Source Tab = Drain T - 55 ... +175 C stg T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in d Weight TO-268 4 g TO-247 6 g Features Normally ON Mode International Standard Packages Molding Epoxies Meet UL 94 V-0 Flammability Classification Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. Advantages J BV V = - 5V, I = 250A 100 V DSX GS D Easy to Mount Space Savings V V = 25V, I = 4mA - 2.0 - 4.5 V GS(off) DS D High Power Density I V = 20V, V = 0V 100 nA GSX GS DS I V = V , V = - 5V 5 A DSX(off) DS DSX GS Applications T = 150C 250 A J Audio Amplifiers R V = 0V, I = 8A, Note 1 64 m DS(on) GS D Start-up Circuits Protection Circuits I V = 0V, V = 25V, Note 1 16 A D(on) GS DS Ramp Generators Current Regulators Active Loads 2017 IXYS CORPORATION, All Rights Reserved DS100258D(7/17)IXTT16N10D2 IXTH16N10D2 Symbol Test Conditions Characteristic Values TO-268 Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 8A, Note 1 7 11 S fs DS D C 5700 pF iss C V = -10V, V = 25V, f = 1MHz 1980 pF oss GS DS C 940 pF rss t 45 ns d(on) Resistive Switching Times t 43 ns r V = + 5V, V = 50V, I = 8A GS DS D t 340 ns Terminals: 1 - Gate 2,4 - Drain d(off) 3 - Source R = 3.3 (External) G t 70 ns f Q 225 nC g(on) Q V = + 5V, V = 50V, I = 8A 22 nC gs GS DS D Q 126 nC gd R 0.18 C/W thJC R TO-247 0.21 C/W thCS Safe-Operating-Area Specification Characteristic Values Symbol Test Conditions Min. Typ. Max. SOA V = 100V, I = 5.6A, T = 75 C, tp = 5s 556 W DS D C TO-247 Outline D A A 0P + B O 0K M D B M E A2 A2 A2 A2 Source-Drain Diode Q S D2 R + + D1 D Symbol Test Conditions Characteristic Values 0P1 4 1 (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. 2 3 ixys option J L1 C V I = 16A, V = -10V, Note 1 0.80 1.30 V E1 SD F GS L t 205 ns rr I = 8A, -di/dt = 100A/ s F A1 b I 8.50 A RM c b2 V = 100V, V = -10V R GS b4 Q 0.88 C PINS: 1 - Gate e RM + O J M C A M 2, 4 - Drain 3 - Source Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537