Depletion Mode V = 200V IXTT16N20D2 DSX MOSFET I > 16A IXTH16N20D2 D(on) R 80m DS(on) D N-Channel TO-268 (IXTT) G G S S D (Tab) TO-247 (IXTH) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 200 V DSX J V T = 25 C to 150 C, R = 1M 200 V DGX J GS V Continuous 20 V G GSX D D (Tab) V Transient 30 V S GSM P T = 25 C 695 W D C G = Gate D = Drain T - 55 ... +150 C J S = Source Tab = Drain T 150 C JM T - 55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. d Features Weight TO-268 4 g TO-247 6 g Normally ON Mode International Standard Packages Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Easy to Mount Space Savings BV V = - 5V, I = 250A 200 V DSX GS D High Power Density V V = 25V, I = 4mA - 2.0 - 4.5 V GS(off) DS D Applications I V = 20V, V = 0V 100 nA GSX GS DS Audio Amplifiers I V = V , V = - 5V 5 A DSX(off) DS DSX GS Start-up Circuits T = 125C 100A J Protection Circuits R V = 0V, I = 8A, Note 1 80 m Ramp Generators DS(on) GS D Current Regulators I V = 0V, V = 25V, Note 1 16 A D(on) GS DS Active Loads 2017 IXYS CORPORATION, All Rights Reserved DS100260E(4/17)IXTT16N20D2 IXTH16N20D2 Symbol Test Conditions Characteristic Values TO-247 Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 8A, Note 1 7 12 S fs DS D C 5500 pF iss P C V = -10V, V = 25V, f = 1MHz 1360 pF 1 2 3 oss GS DS C 607 pF rss t 46 ns d(on) Resistive Switching Times t 130 ns r V = + 5V, V = 100V, I = 8A GS DS D t 270 ns d(off) e R = 3.3 (External) G t 135 ns f Terminals: 1 - Gate 2 - Drain 3 - Source Q 208 nC g(on) Dim. Millimeter Inches Q V = + 5V, V = 100V, I = 8A 28 nC gs GS DS D Min. Max. Min. Max. A 4.7 5.3 .185 .209 Q 110 nC gd A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 R 0.18 C/W 2 thJC b 1.0 1.4 .040 .055 R TO-247 0.21 C/W thCS b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 Safe-Operating-Area Specification E 15.75 16.26 .610 .640 Characteristic Values e 5.20 5.72 0.205 0.225 Symbol Test Conditions Min. Typ. Max. L 19.81 20.32 .780 .800 L1 4.50 .177 SOA V = 200V, I = 2.1A, T = 75 C, tp = 5s 420 W DS D C P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Source-Drain Diode TO-268 Outline Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J V I = 16A, V = -10V, Note 1 0.8 1.3 V SD F GS t 265 ns rr I = 8A, -di/dt = 100A/ s F I 14.3 A RM V = 100V, V = -10V R GS Q 1.9 C RM Note 1. Pulse test, t 300s, duty cycle, d 2%. Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537