IXTH 16P20 V = -200 V Standard Power MOSFET DSS I = -16 A D25 P-Channel Enhancement Mode R = 0.16 DS(on) Avalanche Rated Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 AD V T = 25C to 150C -200 V DSS J V T = 25C to 150C R = 1 M -200 V DGR J GS V Continuous 20 V GS D (TAB) V Transient 30 V GSM I T = 25C -16 A D25 C I T = 25C, pulse width limited by T -64 A DM C J G = Gate, D = Drain, I T = 25C -16 A AR C S = Source, TAB = Drain E T = 25C30mJ AR C P T = 25C 300 W D C T -55 ... +150 C J Features T 150 C JM T -55 ... +150 C International standard package stg JEDEC TO-247 AD T Maximum lead temperature for soldering 300 C L TM Low R HDMOS process 1.6 mm (0.062 in.) from case for 10 s DS (on) Rugged polysilicon gate cell structure M Mounting torque 1.13/10 Nm/lb.in. d Unclamped Inductive Switching (UIS) Weight 6g rated Low package inductance (<5 nH) - easy to drive and to protect Applications Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) High side switching J min. typ. max. Push-pull amplifiers DC choppers V V = 0 V, I = -250 A -200 V DSS GS D Automatic test equipment V V = V , I = -250 A -3.0 -5.0 V GS(th) DS GS D I V = 20 V , V = 0 100 nA GSS GS DC DS Advantages Easy to mount with 1 screw I V = 0.8 V T =25C -25 A DSS DS DSS J (isolated mounting screw hole) V = 0 V T = 125C-1mA GS J Space savings R V = -10 V, I = 0.5 I 0.16 DS(on) GS D D25 High power density 2004 IXYS All rights reserved DS98906B(1/04)IXTH 16P20 Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25C, unless otherwise specified) J min. typ. max. g V = -10 V I = I , pulse test 6 10 S fs DS D D25 C 2800 pF 1 2 3 iss C V = 0 V, V = -25 V, f = 1 MHz 550 pF oss GS DS C 240 pF rss t 33 ns d(on) t V = -10 V, V = 0.5 V , I = 0.5 I 26 ns r GS DS DSS D D25 Terminals: 1 - Gate 2 - Drain t R = 4.7 (External) 65 ns d(off) G 3 - Source Tab - Drain t 25 ns f Dim. Millimeter Inches Min. Max. Min. Max. Q 95 nC g(on) A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 Q V = -10 V, V = 0.5 V , I = 0.5 I 27 nC 1 gs GS DS DSS D D25 A 2.2 2.6 .059 .098 2 Q 40 nC gd b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 R 0.42 K/W b 2.87 3.12 .113 .123 2 thJC C .4 .8 .016 .031 R 0.25 K/W thCS D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 Source-Drain Diode Characteristic Values S 6.15 BSC 242 BSC (T = 25C, unless otherwise specified) J Symbol Test Conditions min. typ. max. I V = 0 -16 A S GS I Repetitive pulse width limited by T -64 A SM JM V I = I , V = 0 V, -3 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = I , di/dt = 100 A/ s, V = -50 V 250 ns rr F S R IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 of the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505