Preliminary Technical Information Depletion Mode V = 1700V IXTA1N170DHV DSX MOSFET I > 1A IXTH1N170DHV D(on) R 16 DS(on) N-Channel TO-263HV (IXTA) G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 1700 V DSX J V T = 25 C to 150 C, R = 1M 1700 V DGX J GS V Continuous 20 V GSX V Transient 30 V GSM G S P T = 25 C 290 W D C D (Tab) D T - 55 ... +150 C J T 150 C JM G = Gate D = Drain T - 55 ... +150 C stg S = Source Tab = Drain T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD F Mounting Force (TO-263HV) 10..65 / 22..14.6 N/lb C M Mounting Torque (TO-247HV) 1.13/10 Nm/lb.in Features d Weight TO-263HV 2.5 g Normally ON Mode TO-247HV 6.0 g Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. Space Savings J High Power Density BV V = - 5V, I = 250A 1700 V DSX GS D V V = 25V, I = 250 A - 2.5 - 4.5 V GS(off) DS D Applications I V = 20V, V = 0V 100 nA GSX GS DS Audio Amplifiers I V = V , V = - 5V 10 A DSX(off) DS DSX GS Start-Up Circuits T = 125C 100A J Protection Circuits Ramp Generators R V = 0V, I = 0.5A, Note 1 16 DS(on) GS D Current Regulators I V = 0V, V = 50V, Note 1 1.0 A Active Loads D(on) GS DS 2017 IXYS CORPORATION, All Rights Reserved DS100609A(2/17)IXTA1N170DHV IXTH1N170DHV Symbol Test Conditions Characteristic Values TO-263HV-2L Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. E A J L1 c2 g V = 30V, I = 0.5A, Note 1 570 950 mS fs DS D D1 D H 3 C 3090 pF E1 1 A1 iss 2 L4 C V = -10V, V = 25V, f = 1MHz 95 pF L oss GS DS L3 b2 b e2 e1 C 30 pF c rss PIN: 1 - Gate 2 - Source t 46 ns d(on) 3 - Drain Resistive Switching Times t 38 ns r V = 5V, V = 850V, I = 0.5A A2 GS DS D t 130 ns d(off) R = 10 (External) G t 216 ns f Q 47 nC g(on) Q V = +5V, V = 850V, I = 0.5A 3.7 nC gs GS DS D Q 25 nC gd R 0.43 C/W thJC R TO-247HV 0.21 C/W thCS Safe-Operating-Area Specification Characteristic Values Symbol Test Conditions Min. Typ. Max. SOA V = 1700V, I = 100mA, T = 75 C, Tp = 5s 170 W DS D C TO-247HV Outline E A E1 R 0P A2 0P1 Source-Drain Diode Q S Symbol Test Conditions Characteristic Values D1 (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. D 4 J D2 V I = 1A, V = -10V, Note 1 0.75 1.30 V SD F GS 1 2 3 L1 A3 D3 2X E2 t 2.8 s E3 rr A1 I = 1A, -di/dt = 100A/ s L F 4X I 45.0 A RM V = 100V, V = -10V R GS Q 63.0 C RM e b b1 c e1 3X 3X PINS: 1 - Gate 2 - Source 3, 4 - Drain Note 1. Pulse test, t 300s, duty cycle, d 2%. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537