High Voltage V = 2000V IXTA1N200P3HV DSS Power MOSFET I = 1.0A IXTH1N200P3HV D25 R 40 IXTH1N200P3 DS(on) N-Channel Enhancement Mode TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-247HV (IXTH) V T = 25 C to 150 C 2000 V DSS J V T = 25 C to 150 C, R = 1M 2000 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM I T = 25 C 1.0 A D25 C G S I T = 110 C 0.6 A D110 C D (Tab) D I T = 25 C, Pulse Width Limited by T 3.0 A DM C JM TO-247 (IXTH) P T = 25 C 125 W D C T - 55 ... +150 C J T 150 C JM T - 55 ... +150 C stg G T Maximum Lead Temperature for Soldering 300 C D D (Tab) L S T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD F Mounting Force (TO-263HV) 10..65 / 22..14.6 N/lb C G = Gate D = Drain M Mounting Torque (TO-247/HV) 1.13/10 Nm/lb.in S = Source Tab = Drain d Weight TO-263HV 2.5 g TO-247/HV 6.0 g Features High Blocking Voltage High Voltage Packages Symbol Test Conditions Characteristic Values Advantages (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250 A 2000 V DSS GS D Easy to Mount Space Savings V V = V , I = 250A 2.0 4.0 V GS(th) DS GS D High Power Density I V = 20V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 5 A DSS DS DSS GS Applications T = 125C 100A J High Voltage Power Supplies R V = 10V, I = 0.5A, Note 1 40 DS(on) GS D Capacitor Discharge Applications Pulse Circuits Laser and X-Ray Generation Systems 2017 IXYS CORPORATION, All Rights Reserved. DS100563B(2/17)IXTH1N200P3 IXTA1N200P3HV IXTH1N200P3HV Symbol Test Conditions Characteristic Values TO-247 Outline D A (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. A B J A2 E Q g V = 50V, I = 0.5A, Note 1 0.4 0.7 S S fs DS D D2 R D1 D C 646 pF iss P1 4 1 2 3 C V = 0V, V = 25V, f = 1MHz 50 pF oss GS DS L1 C C 17 pF rss E1 L t 16 ns d(on) Resistive Switching Times t 26 ns A1 b r C b2 V = 10V, V = 1kV, I = 0.5 I 1 - Gate GS DS D D25 b4 t 37 ns e 2,4 - Drain d(off) R = 5 (External) 3 - Source G t 80 ns f Q 23.5 nC g(on) Q V = 10V, V = 1kV, I = 0.5 I 3.1 nC gs GS DS D D25 Q 13.3 nC gd R 1.0 C/W thJC R TO-247 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 1 A S GS I Repetitive, Pulse Width Limited by T 4 A SM JM TO-247HV Outline E A E1 V I = I , V = 0V, Note 1 1.5 V R SD F S GS 0P A2 0P1 Q S t I = 1A, -di/dt = 100A/ s, V = 100V 2.3 s rr F R D1 D 4 D2 1 2 3 L1 A3 D3 2X E2 Note: 1. Pulse test, t 300 s, duty cycle, d 2%. E3 A1 L 4X e b b1 c e1 3X 3X PINS: 1 - Gate 2 - Source TO-263HV Outline 3, 4 - Drain E A L1 C2 D1 D H 3 E1 1 2 A1 L4 L L3 GAUGE b2 b e2 PLANE e1 C PIN: 1 - Gate 0 8 2 - Source 3 - Drain A2 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537