Preliminary Technical Information High Voltage V = 3000V IXTT1N300P3HV DSS Power MOSFET I = 1.00A IXTH1N300P3HV D25 R 50 DS(on) N-Channel Enhancement Mode TO-268HV (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 3000 V DSS J TO-247HV (IXTH) V T = 25 C to 150 C, R = 1M 3000 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM I T = 25 C 1.00 A D25 C G I T = 110 C 0.65 A D110 C S I T = 25 C, Pulse Width Limited by T 2.60 A D (Tab) D DM C JM P T = 25 C 195 W D C T - 55 ... +150 C G = Gate D = Drain J T 150 C S = Source Tab = Drain JM T - 55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Features M Mounting Torque (TO-247) 1.13/10 Nm/lb.in d Weight TO-268HV 4.0 g High Blocking Voltage TO-247HV 6.0 g High Voltage Packages Advantages Easy to Mount Space Savings Symbol Test Conditions Characteristic Values High Power Density (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250 A 3000 V DSS GS D Applications V V = V , I = 250A 2.0 4.0 V GS(th) DS GS D High Voltage Power Supplies I V = 20V, V = 0V 100 nA GSS GS DS Capacitor Discharge Applications Pulse Circuits I V = 0.8 V , V = 0V 25 A DSS DS DSS GS Laser and X-Ray Generation Systems T = 125C 250A J R V = 10V, I = 0.5A, Note 1 50 DS(on) GS D 2014 IXYS CORPORATION, All Rights Reserved DS100590A(6/14)IXTT1N300P3HV IXTH1N300P3HV Symbol Test Conditions Characteristic Values TO-268HV Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. E A E1 J L2 C2 g V = 50V, I = 0.5A, Note 1 0.4 0.7 S fs DS D 3 D1 3 D H D2 C 895 pF iss 1 2 D3 2 1 A1 L4 C V = 0V, V = 25V, f = 1MHz 48 pF oss GS DS C e e b C 17 pF rss t 22 ns d(on) Resistive Switching Times t 35 ns r V = 10V, V = 500V, I = 0.5 I GS DS D D25 t 78 ns L3 d(off) A2 R = 20 (External) G L t 60 ns f Q 30.6 nC g(on) Q V = 10V, V = 1kV, I = 0.5 I 4.0 nC gs GS DS D D25 Q 15.7 nC gd R 0.64 C/W thJC R TO-247HV 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 1.0 A S GS I Repetitive, Pulse Width Limited by T 4.0 A SM JM TO-247HV Outline E1 E A R 0P A2 0P1 V I = I , V = 0V, Note 1 1.5 V SD F S GS Q S t I = 1A, -di/dt = 100A/ s, V = 100V 1.8 s rr F R D1 D 4 D2 1 2 3 L1 A3 D3 E2 2X E3 A1 4X L Note: 1. Pulse test, t 300 s, duty cycle, d 2%. e b b1 c e1 3X 3X PINS: 1 - Gate 2 - Source 3, 4 - Drain PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537