V = 500 V High Voltage IXTH 20N50D DSS MOSFET IXTT 20N50D I =20A D25 N-Channel, Depletion Mode R = 0.33 DS(on) Preliminary Data Sheet TO-247 (IXFH) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 500 V DSX J V T = 25C to 150C 500 V DGX J G V Continuous 30 V GS D S (TAB) V Transient 40 V GSM I T = 25C 20 A TO-268 (IXTT) D25 C I T = 25C pulse width limited by T 50 A DM C JM P T = 25C 400 W D C G T -55 ... + 150 C J S D (TAB) T 150 C JM T -55 ... + 150 C stg G = Gate D = Drain S = Source TAB = Drain T 1.6 mm (0.063 in) from case for 10 seconds 300 C L T Plastic case for 10 seconds 300 C ISOL M Mounting torque 1.13/10 Nm/lb.in. d Features Weight TO-247 6 g z TO-268 4 g Normally ON Mode z International standard packages z Molding epoxies meet UL 94 V-0 flammability classification Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) J min. typ. max. Applications V V = -10 V, I = 250 mA 500 V DSX GS D z Level shifting V V = 25 V, I = 250 mA -1.5 -3.5 V z GS(off) DS D Triggers z Solid State Relays I V = 30 V , V = 0 100 nA GSS GS DC DS z Current Regulators z I V = V T = 25C 25 A Active load DSX(off) DS DSS J V = -10 V T = 125C 500 A GS J R V = 10 V, I = 10 A Note 1 0.33 DS(on) GS D I V = 0 V, V = 25 V Note 1 1.5 A D(on) GS DS 2006 IXYS All rights reserved 99192(01/06)IXTH 20N50D IXTT 20N50D Symbol Test Conditions Characteristic Values TO-247 AD (IXTH) Outline (T = 25C, unless otherwise specified) J min. typ. max. g V = 30 V, I =10 A, Note 1 4.0 7.5 S fs DS D 1 2 3 C 2500 pF iss C V = -10 V, V = 25 V, f = 1 MHz 400 pF oss GS DS C 100 pF rss t 35 ns d(on) t V = 0 V to -10 V, V = 0.5 V 85 ns r GS DS DSX Terminals: t I = 10 A, R = 4.7 (External), 110 ns 1 - Gate 2 - Drain d(off) D G 3 - Source Tab - Drain t 75 ns f Dim. Millimeter Inches Min. Max. Min. Max. Q 125 nC g(on) A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 Q V = 10 V, V = 0.5 V , I = 0.5 I 35 nC 1 gs GS DS DSX D D25 A 2.2 2.6 .059 .098 2 Q 51 nC gd b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 R 0.31 K/W b 2.87 3.12 .113 .123 thJC 2 R 0.25 K/W C .4 .8 .016 .031 thCK D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 Source-Drain Diode Characteristic Values (T = 25C, unless otherwise specified) P 3.55 3.65 .140 .144 J Q 5.89 6.40 0.232 0.252 Symbol Test Conditions min. typ. max. R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC V I = I , V = -10 V, Note 1 0.85 1.5 V SD F D25 GS TO-268 (IXTTH) Outline t I = 20A, -di/dt = 100 A/s, V = 100 V 510 ns rr F R v = -10 V GS Note 1: Pulse test, t 300 s, duty cycle d 2 % Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463