TM IXTH 20N60 V = 600 V MegaMOS FET DSS IXTM 20N60 I = 20 A D25 R = 0.35 DS(on) N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) V T = 25C to 150C 600 V DSS J V T = 25C to 150C R = 1 M 600 V DGR J GS V Continuous 20 V D (TAB) GS V Transient 30 V GSM I T = 25C 15N60 15 A D25 C TO-204 AE (IXTM) 20N60 20 A I T = 25C, pulse width limited by T 15N60 60 A DM C JM 20N60 80 A P T = 25C 300 W D C T -55 ... +150 C J G D T 150 C JM G = Gate, D = Drain, T -55 ... +150 C stg S = Source, TAB = Drain M Mounting torque 1.13/10 Nm/lb.in. d Weight TO-204 = 18 g, TO-247 = 6 g Maximum lead temperature for soldering 300 C Features 1.6 mm (0.062 in.) from case for 10 s l International standard packages TM l Low R HDMOS process DS (on) l Rugged polysilicon gate cell structure l Low package inductance (< 5 nH) - easy to drive and to protect l Fast switching times Symbol Test Conditions Characteristic Values Applications (T = 25C, unless otherwise specified) J l Switch-mode and resonant-mode min. typ. max. power supplies l Motor control V V = 0 V, I = 250 A 600 V DSS GS D l Uninterruptible Power Supplies (UPS) V V = V , I = 250 A 2 4.5 V GS(th) DS GS D l DC choppers I V = 20 V , V = 0 100 nA GSS GS DC DS Advantages I V = 0.8 V T = 25C 200 A DSS DS DSS J V = 0 V T = 125C1mA GS J l Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) R V = 10 V, I = 0.5 I 0.35 DS(on) GS D D25 l Space savings Pulse test, t 300 s, duty cycle d 2 % l High power density IXYS reserves the right to change limits, test conditions, and dimensions. 91537E(5/96) 2000 IXYS All rights reserved 1 - 4IXTH 20N60 IXTM 20N60 Symbol Test Conditions Characteristic Values TO-247 AD (IXTH) Outline (T = 25C, unless otherwise specified) J min. typ. max. g V = 10 V I = 0.5 I , pulse test 11 18 S fs DS D D25 C 4500 pF 1 2 3 iss C V = 0 V, V = 25 V, f = 1 MHz 420 pF oss GS DS C 140 pF rss t 20 40 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 43 60 ns r GS DS DSS D D25 Terminals: 1 - Gate 2 - Drain t R = 2 , (External) 70 90 ns d(off) G 3 - Source Tab - Drain t 40 60 ns f Dim. Millimeter Inches Min. Max. Min. Max. Q 150 170 nC g(on) A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 Q V = 10 V, V = 0.5 V , I = 0.5 I 29 40 nC 1 gs GS DS DSS D D25 A 2.2 2.6 .059 .098 2 Q 60 85 nC gd b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 R 0.42 K/W b 2.87 3.12 .113 .123 2 thJC C .4 .8 .016 .031 R 0.25 K/W thCK D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 Source-Drain Diode Characteristic Values P 3.55 3.65 .140 .144 (T = 25C, unless otherwise specified) J Q 5.89 6.40 0.232 0.252 Symbol Test Conditions min. typ. max. R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC I V = 0 V 20 A S GS I Repetitive 80 A SM TO-204AE (IXTM) Outline V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = I , -di/dt = 100 A/ s, V = 100 V 600 ns rr F S R Pins 1 - Gate 2 - Source Case - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 6.4 11.4 .250 .450 A1 1.53 3.42 .060 .135 b 1.45 1.60 .057 .063 D 22.22 .875 e 10.67 11.17 .420 .440 e1 5.21 5.71 .205 .225 L 11.18 12.19 .440 .480 p 3.84 4.19 .151 .165 p1 3.84 4.19 .151 .165 q 30.15 BSC 1.187 BSC R 12.58 13.33 .495 .525 R1 3.33 4.77 .131 .188 s 16.64 17.14 .655 .675 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 2000 IXYS All rights reserved 2 - 4 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025