X-On Electronics has gained recognition as a prominent supplier of IXTH20N65X MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTH20N65X MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXTH20N65X IXYS

IXTH20N65X electronic component of IXYS
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See Product Specifications
Part No.IXTH20N65X
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET 650V/9A Power MOSFET
Datasheet: IXTH20N65X Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 11.774 ea
Line Total: USD 11.77 
Availability - 265
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
265
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 11.774
2 : USD 8.4
3 : USD 8.386
6 : USD 7.938

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IXTH20N65X from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTH20N65X and other electronic components in the MOSFETs category and beyond.

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Preliminary Technical Information X-Class V = 650V IXTA20N65X DSS Power MOSFET I = 20A IXTP20N65X D25 R 210m DS(on) IXTH20N65X N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) V T = 25 C to 150 C 650 V DSS J V T = 25 C to 150 C, R = 1M 650 V DGR J GS V Continuous 30 V GSS V Transient 40 V G GSM D D (Tab) S I T = 25 C20A D25 C TO-247 (IXTH) I T = 25 C, Pulse Width Limited by T 40 A DM C JM dv/dt I I , V V , T 150C 30 V/ns S D25 DD DSS J P T = 25 C 320 W D C G T -55 ... +150 C J D D (Tab) S T 150 C JM T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C G = Gate D = Drain L S = Source Tab = Drain T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD F Mounting Force (TO-263) 10.65 / 2.2..14.6 N/lb C M Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in d Features Weight TO-263 2.5 g TO-220 3.0 g TO-247 6.0 g International Standard Packages Low R and Q DS(ON) G Low Package Inductance Advantages Symbol Test Conditions Characteristic Values High Power Density (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Easy to Mount BV V = 0V, I = 250A 650 V Space Savings DSS GS D V V = V , I = 250A 3.0 5.5 V GS(th) DS GS D Applications I V = 30V, V = 0V 100 nA GSS GS DS Switch-Mode and Resonant-Mode I V = V , V = 0V 5 A DSS DS DSS GS Power Supplies T = 125C 50 A J DC-DC Converters PFC Circuits R V = 10V, I = 0.5 I , Note 1 210 m DS(on) GS D D25 AC and DC Motor Drives Robotics and Servo Controls 2015 IXYS CORPORATION, All Rights Reserved DS100564E(6/15) IXTA20N65X IXTP20N65X IXTH20N65X Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 9 15 S fs DS D D25 R Gate Input Resistance 3.4 Gi C 1390 pF iss C V = 0V, V = 25V, f = 1MHz 1060 pF oss GS DS C 22 pF rss Effective Output Capacitance C 77 pF o(er) Energy related V = 0V GS C 232 pF V = 0.8 V o(tr) Time related DS DSS t 18 ns d(on) Resistive Switching Times t 30 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 46 ns d(off) R = 5 (External) G t 22 ns f Q 35 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 7 nC gs GS DS DSS D D25 Q 18 nC gd R 0.39 C/W thJC R TO-220 0.50 C/W thCS TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 20 A S GS I Repetitive, pulse Width Limited by T 80 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 350 ns rr I = 10A, -di/dt = 100A/ s F Q 4.45 C RM V = 100V R I 25 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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