X2-Class V = 650V IXTA20N65X2 DSS TM Power MOSFET I = 20A IXTP20N65X2 D25 R 185m DS(on) IXTH20N65X2 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 650 V DSS J V T = 25 C to 150 C, R = 1M 650 V DGR J GS V Continuous 30 V GSS G V Transient 40 V D GSM S D (Tab) I T = 25 C20A D25 C I T = 25 C, Pulse Width Limited by T 22 A TO-247 (IXTH) DM C JM I T = 25 C5A A C E T = 25 C 400 mJ AS C dv/dt I I , V V , T 150C 15 V/ns S DM DD DSS J G D D (Tab) P T = 25 C 290 W S D C -55 ... +150 C T J G = Gate D = Drain S = Source Tab = Drain T 150 C JM T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L Features T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C International Standard Packages M Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in d Low R and Q DS(ON) G Weight TO-263 2.5 g Avalanche Rated TO-220 3.0 g Low Package Inductance TO-247 6.0 g Advantages Symbol Test Conditions Characteristic Values High Power Density (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. Easy to Mount J Space Savings BV V = 0V, I = 250A 650 V DSS GS D Applications V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 30V, V = 0V 100 nA GSS GS DS Power Supplies I V = V , V = 0V 5 A DC-DC Converters DSS DS DSS GS T = 125C 50 A PFC Circuits J AC and DC Motor Drives R V = 10V, I = 0.5 I , Note 1 155 185 m DS(on) GS D D25 Robotics and Servo Controls 2018 IXYS CORPORATION, All Rights Reserved DS100868C(6/18)IXTA20N65X2 IXTP20N65X2 IXTH20N65X2 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 11 18 S fs DS D D25 R Gate Input Resistance 3.7 Gi C 1450 pF iss C V = 0V, V = 25V, f = 1MHz 1060 pF oss GS DS C 1.4 pF rss Effective Output Capacitance C 64 pF o(er) Energy related V = 0V GS C 250 pF V = 0.8 V o(tr) Time related DS DSS t 19 ns d(on) Resistive Switching Times t 27 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 47 ns d(off) R = 10 (External) G t 20 ns f Q 27 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 8 nC gs GS DS DSS D D25 Q 11 nC gd R 0.43 C/W thJC R TO-220 0.50 C/W thCS TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 20 A S GS I Repetitive, pulse Width Limited by T 80 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 350 ns rr I = 10A, -di/dt = 100A/ s F Q 4.3 C RM V = 100V R I 24.6 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537