TM Linear Power MOSFET V = 500V IXTH24N50L DSS I = 24A w/ Extended FBSOA D25 R 300m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings V T = 25C to 150C 500 V DSS J V T = 25C to 150C, R = 1M 500 V DGR J GS G D Tab V Continuous 30 V S GSS V Transient 40 V GSM G = Gate D = Drain I T = 25C 24 A D25 C S = Source Tab = Drain I T = 25C, Pulse Width Limited by T 50 A DM C JM I T = 25C12 A A C E T = 25C 1.5 J AS C P T = 25C 400 W D C Features T -55 ... +150 C J T 150 C JM Designed for Linear Operation T -55 ... +150 C stg International Standard Package T 1.6mm (0.062in.) from Case for 10s 300 C Avalanche Rated L T Plastic Body for 10 seconds 260 C Molding Epoxy Meets UL94 V-0 sold Flammability Classification M Mounting Torque 1.13 / 10 Nm/lb.in. d Weight 6 g Advantages Easy to Mount Space Savings High Power Density Symbol Test Conditions Characteristic Values Applications (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Programmable Loads BV V = 0V, I = 250A 500 V DSS GS D Current Regulators V V = V , I = 250A 3.5 6.0 V GS(th) DS GS D DC-DC Converters Battery Chargers I V = 30V, V = 0V 100 nA GSS GS DS DC Choppers I V = V , V = 0V 50 A DSS DS DSS GS Temperature and Lighting Controls T = 125C 500 A J R V = 20V, I = 0.5 I , Note 1 300 m DS(on) GS D D25 2011 IXYS CORPORATION, All Rights Reserved DS99125B(01/11) IXTH24N50L Symbol Test Conditions Characteristic Values TO-247 (IXTH) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 3 7 11 S fs DS D D25 C 2500 pF iss P C V = 0V, V = 25V, f = 1MHz 400 pF oss GS DS 1 2 3 C 100 pF rss t 35 ns d(on) Resistive Switching Times t 85 ns r V = 15V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 110 ns d(off) R = 4.7 (External) G e t 75 ns f Terminals: 1 - Gate 2 - Drain Q 160 nC g(on) 3 - Source Q V = 20V, V = 0.5 V , I = 0.5 I 30 nC gs GS DS DSS D D25 Dim. Millimeter Inches Min. Max. Min. Max. Q 50 nC gd A 4.7 5.3 .185 .209 R 0.31 C/W A 2.2 2.54 .087 .102 1 thJC A 2.2 2.6 .059 .098 2 R 0.21 C/W thCS b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 Safe-Operating-Area Specification E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 Symbol Test Conditions Characteristic Values L1 4.50 .177 Min. Typ. Max. P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 SOA V = 400V, I = 0.5A, T = 60C 200 W DS D C R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 24 A S GS I Repetitive, Pulse Width Limited by T 96 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 500 ns I = I , -di/dt = 100A/s rr F S V = 100V, V = 0V R GS Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537