IXTH 24P20 Standard Power MOSFET V = - 200 V DSS IXTT 24P20 I = - 24 A D25 P-Channel Enhancement Mode R 0.15 DS(on) Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) V T = 25C to 150C -200 V DSS J V T = 25C to 150C R = 1 M -200 V DGR J GS V Continuous 20 V GS D (TAB) V Transient 30 V GSM I T = 25C -24 A D25 C I T = 25C, pulse width limited by T -96 A DM C J I T = 25C -24 A AR C TO-268 (IXTT) E T = 25C30mJ AR C P T = 25C 300 W D C T -55 ... +150 C G J S D (TAB) T 150 C JM T -55 ... +150 C stg Maximum lead temperature for soldering 400 C G = Gate, D = Drain, 1.6 mm (0.062 in.) from case for 10 s S = Source, TAB = Drain Plastic Body for 10s 250 C Features M Mounting torque (TO-247) 1.13/10 Nm/lb.in. d International standard packages Weight TO-247 6 g TM Low R HDMOS process DS (on) TO-268 5 g Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Symbol Test Conditions Characteristic Values Low package inductance (<5 nH) (T = 25C, unless otherwise specified) J - easy to drive and to protect min. typ. max. V V = 0 V, I = -250 A -200 V DSS GS D Applications High side switching V V = V , I = -250 A -3.0 -5.0 V GS(th) DS GS D Push-pull amplifiers I V = 20 V , V = 0 100 nA GSS GS DC DS DC choppers I V = 0.8 V T =25C -25 A Automatic test equipment DSS DS DSS J V = 0 V T = 125C-1mA GS J R V = -10 V, I = 0.5 I 0.15 DS(on) GS D D25 Advantages Easy to mount with 1 screw (isolated mounting screw hole) Space savings High power density 2005 IXYS All rights reserved DS98769G(02/05)IXTH 24P20 IXTT 24P20 TO-247 (IXTH) Outline Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) J min. typ. max. g V = -10 V I = I , pulse test 10 15 S fs DS D D25 1 2 3 C 4200 pF iss C V = 0 V, V = -25 V, f = 1 MHz 830 pF oss GS DS C 350 pF rss t 36 ns d(on) t V = -10 V, V = 0.5 V , I = 0.5 I 29 ns r GS DS DSS D D25 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain t R = 4.7 (External) 68 ns d(off) G Dim. Millimeter Inches t 28 ns f Min. Max. Min. Max. A 4.7 5.3 .185 .209 Q 150 nC g(on) A 2.2 2.54 .087 .102 1 Q V = -10 V, V = 0.5 V , I = 0.5 I 40 nC A 2.2 2.6 .059 .098 2 gs GS DS DSS D D25 b 1.0 1.4 .040 .055 Q 70 nC gd b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 R 0.42 K/W C .4 .8 .016 .031 thJC D 20.80 21.46 .819 .845 R (TO-247) 0.25 K/W thCS E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Source-Drain Diode Characteristic Values (T = 25C, unless otherwise specified) TO-268 (IXTT) Outline J Symbol Test Conditions min. typ. max. I V = 0 -24 A S GS I Repetitive pulse width limited by T -96 A SM JM V I = I , V = 0 V, -3 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = I , di/dt = 100 A/s, V = -50 V 250 ns rr F S R IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2