Preliminary Technical Information TM V = 55V TrenchT2 Power IXTH260N055T2 DSS I = 260A MOSFET D25 R 3.3m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings V T = 25C to 175C55 V DSS J G V T = 25C to 175C, R = 1M 55 V DGR J GS (TAB) D S V Transient 20 V GSM I T = 25C 260 A D25 C G = Gate D = Drain I Lead Current Limit, RMS 160 A LRMS S = Source TAB = Drain I T = 25C, pulse width limited by T 780 A DM C JM I T = 25C 100 A A C E T = 25C 600 mJ AS C Features P T = 25C 480 W D C z International standard package T -55 ... +175 C J z 175C Operating Temperature T 175 C z JM High current handling capability T -55 ... +175 C z stg Avalanche rated z Low R T 1.6mm (0.062in.) from case for 10s 300 C DS(on) L T Plastic body for 10 seconds 260 C sold M Mounting torque 1.13 / 10 Nm/lb.in. d Advantages Weight 6 g z Easy to mount z Space savings z High power density Symbol Test Conditions Characteristic Values Applications (T = 25C unless otherwise specified) Min. Typ. Max. J z Automotive BV V = 0V, I = 250A 55 V DSS GS D - Motor Drives - 12V Battery V V = V , I = 250A 2.0 4.0 V GS(th) DS GS D - ABS Systems z I V = 20V, V = 0V 200 nA DC/DC Converters and Off-line UPS GSS GS DS z Primary- Side Switch I V = V 5 A DSS DS DSS z High Current Switching Applications V = 0V T = 150C 150 A GS J R V = 10V, I = 50A, Notes 1, 2 3.3 m DS(on) GS D DS100078(11/08) 2008 IXYS CORPORATION, All rights reservedIXTH260N055T2 Symbol Test Conditions Characteristic Values TO-247 (IXTH) Outline (T = 25C, unless otherwise specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 55 94 S fs DS D C 10.8 nF iss P C V = 0V, V = 25V, f = 1MHz 1460 pF 1 2 3 oss GS DS C 215 pF rss t 20 ns d(on) Resistive Switching Times t 27 ns r V = 10V, V = 0.5 V , I = 100A GS DS DSS D t 36 ns d(off) e R = 2 (External) G t 24 ns Terminals: 1 - Gate 2 - Drain f Q 140 nC Dim. Millimeter Inches g(on) Min. Max. Min. Max. Q V = 10V, V = 0.5 V , I = 0.5 I 52 nC gs GS DS DSS D D25 A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 Q 32 nC 1 gd A 2.2 2.6 .059 .098 2 R 0.31 C/W b 1.0 1.4 .040 .055 thJC b 1.65 2.13 .065 .084 1 R 0.21 C/W b 2.87 3.12 .113 .123 thCH 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 Source-Drain Diode e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 Symbol Test Conditions Characteristic Values L1 4.50 .177 (T = 25C, unless otherwise specified) Min. Typ. Max. J P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 I V = 0V 260 A S GS R 4.32 5.49 .170 .216 I Repetitive, Pulse width limited by T 1000 A SM JM V I = 100A, V = 0V, Note 1 1.3 V F GS SD t 60 ns I = 130A, V = 0V rr F GS I -di/dt = 100A/s 3.4 A RM V = 27V R Q 102 nC RM Note 1: Pulse test, t 300s duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537