Preliminary Technical Information TM V = 40V TrenchT4 IXTP270N04T4 DSS I = 270A Power MOSFET IXTH270N04T4 D25 R 2.4m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-220AB (IXTP) G D D (Tab) S Symbol Test Conditions Maximum Ratings TO-247 (IXTH) V T = 25 C to 175 C40 V DSS J V T = 25 C to 175 C, R = 1M 40 V DGR J GS V Transient 15 V GSM G I T = 25 C 270 A D25 C D D (Tab) S I Lead Current Limit, RMS 160 A LRMS I T = 25 C, Pulse Width Limited by T 800 A DM C JM G = Gate D = Drain S = Source Tab = Drain I T = 25 C 135 A A C E T = 25 C 750 mJ AS C I T = 25 C 270 A A C E T = 25 C 350 mJ AS C P T = 25 C 375 W Features D C T -55 ... +175 C J International Standard Packages T 175 C JM 175C Operating Temperature T -55 ... +175 C High Current Handling Capability stg Avalanche Rated T Maximum Lead Temperature for Soldering 300 C L Low R DS(on) T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Torque 1.13 / 10 Nm/lb.in d Advantages Weight TO-220 3 g TO-247 6 g Easy to Mount Space Savings High Power Density Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 250 A 40 V DSS GS D Synchronous Buck Converters V V = V , I = 250 A 2.0 4.0 V GS(th) DS GS D High Current Switching Power I V = 15V, V = 0V 200 nA GSS GS DS Supplies I V = V , V = 0V 5 A Battery Powered Electric Motors DSS DS DSS GS T = 150C 750A Resonant-Mode Power Supplies J Electronics Ballast Application R V = 10V, I = 50A, Note 1 2.4 m DS(on) GS D Class D Audio Amplifiers 2016 IXYS CORPORATION, All Rights Reserved DS100671B(03/16) IXTP270N04T4 IXTH270N04T4 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 90 150 S fs DS D R Gate Input Resistance 1.4 Gi C 9140 pF iss C V = 0V, V = 25V, f = 1MHz 1450 pF GS DS oss C 980 pF rss t 18 ns d(on) Resistive Switching Times t 28 ns r V = 10V, V = 0.5 V , I = 135A GS DS DSS D t 72 ns d(off) R = 2 (External) G t 23 ns f Q 182 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 45 nC gs GS DS DSS D D25 Q 67 nC gd R 0.40C/W thJC TO-220 0.50 C/W R thCS TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 270 A S GS I Repetitive, Pulse width limited by T 1080 A JM SM V I = 100A, V = 0V, Note 1 1.4 V SD F GS t 48 ns rr I = 150A, V = 0V F GS I 1.8 A RM -di/dt = 100A/ s V = 30V Q 43 nC R RM Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. On through-hole packages, R Kelvin test contact location must be 5mm DS(on) or less from the package body. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537